Power Amplification at 55-65 GHz with 18 GHz Gain-Bandwidth Product

Raue, J.E.

doi:10.1109/gmtt.1973.1123091

1973 IEEE G-MTT International Microwave Symposium 1973

DOI: 10.1109/gmtt.1973.1123091

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Power Amplification at 55-65 GHz with 18 GHz Gain-Bandwidth Product

J.E. Raue¹

Abstract: A high efficiency silicon avalanche diode power amplifier with 100-200 mWoutput power is described.Typical single stage gain of 20-22 dB with bandwidths exceeding 1 GHz has been achieved in production quantities. Best performance showed an 18 GHz voltage gain-bandwidth product.

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Power Amplification at 55-65 GHz with 18 GHz Gain-Bandwidth Product

Abstract: A high efficiency silicon avalanche diode power amplifier with 100-200 mWoutput power is described.Typical single stage gain of 20-22 dB with bandwidths exceeding 1 GHz has been achieved in production quantities. Best performance showed an 18 GHz voltage gain-bandwidth product.

Cited by 0 publications

References 1 publication

No citations

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