Powder synthesis and ammonothermal crystal growth of GaN from metallic Ga in the presence of NH4I

Acidic ammonothermal growth of GaN crystals using GaN powder as a nutrient

“…Ammonothermal crystal growth of GaN using different nutrients was carried out in a custom-made autoclave that contained a Pt lining on the inner wall to prevent corrosion of the Ni-based superalloy. 5 A photograph and schematic illustration of the autoclave are shown in Fig. 1.…”

“…In our previous studies, we gradually improved the growth rates of GaN crystals from several to 105 mm per day by optimizing the growth conditions using polycrystalline GaN as a nutrient. 5 Currently, growth rates of up to 150 mm per day on Ga faces and 237 mm per day on N faces can be achieved.…”

“…7 The growth rate achieved using Ga metal as a nutrient was 20 mm per day at most in our previous studies. 5 Here, we managed to increase this value to 33 mm per day on both Ga and N faces.…”

“…Recently, we reported a facile method to synthesize highpurity GaN powder by ammonolysis of Ga metal in the presence of NH 4 I at a much lower temperature (540 uC) than used previously. 5 As a continuing study, we report here the use of GaN powder as a novel nutrient for GaN crystal growth.…”

The effect of nitridation temperature on the structural, optical and electrical properties of GaN nanoparticles

“…Thus, it is more essential to synthesis a bulk GaN single crystal as a suitable substrate for device applications with improved luminescence performance and life time. GaN NPs are required as a precursor material for the fabrication of GaN single crystals by sublimation, 10 high pressure solution method 11 and ammonothermal method 12 and also deposition targets for thin films. Generally, GaN NPs prepared by the reaction of Ga 2 O 3 with NH 3 has high concentration of residual oxygen, which increases the density of dislocation and reduces the continuous growth of the GaN single crystal.…”