Potentiality of IMPATT Devices as Terahertz Source: An Avalanche Response Time-based Approach to Determine the Upper Cut-off Frequency Limits

In this paper the potentiality of impact avalanche transit time (IMPATT) devices based on different semiconductor materials such as GaAs, Si, InP, 4H-SiC and Wurtzite-GaN (Wz-GaN) has been explored for operation at terahertz frequencies. Drift-diffusion model is used to design double-drift region (DDR) IMPATTs based on different materials at millimeter-wave (mm-wave) and terahertz (THz) frequencies. The performance limitations of these devices are studied from the avalanche response times at different mm-wave and THz frequencies. Results show that the upper cut-off frequency limits of GaAs and Si DDR IMPATTs are 220 GHz and 0.5 THz, respectively, whereas the same for InP and 4H-SiC DDR IMPATTs is 1.0 THz. Wz-GaN DDR IMPATTs are found to be excellent candidate for generation of RF power at THz frequencies of the order of 5.0 THz with appreciable DC to RF conversion efficiency. Further, it is observed that up to 1.0 THz, 4H-SiC DDR IMPATTs excel Wz-GaN DDR IMPATTs as regards their RF power outputs. Thus, the wide bandgap semiconductors such as Wz-GaN and 4H-SiC are highly suitable materials for DDR IMPATTs at both mm-wave and THz frequency ranges.

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“…When avalanche process is initiated by a mixture of electrons and holes then the corresponding response time s A is given by , 2013) …”

Section: Calculation Of Avalanche Response Timementioning

confidence: 99%

Prospects of IMPATT devices based on wide bandgap semiconductors as potential terahertz sources

Acharyya

Banerjee

2012

Appl Nanosci

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“…Therefore, the drift-diffusion model has been widely used in the IMPATT diode simulations [5,[24][25][26]. In this paper, numerical simulations based on a two-dimensional drift-diffusion transport model have been carried out for the 4H-SiC IMPATT diode with a high-low single drift structure.…”

Section: Materials Parameters and Simulation Methodsmentioning

confidence: 99%

“…The material parameters which are responsible for heat generation and dissipation in IMPATT diodes limit the output power of conventional Si and GaAs IMPATT diodes at a particular frequency [3]. In order to realize high-power, high-frequency IMPATT sources, wide bandgap semiconductor materials such as SiC and GaN have aroused a lot of interest as an attractive IMPATT diodes material for its high critical field, wide band gap and high thermal conductivity [4][5][6][7][8]. For D-band applications, it is found that 4H-SiC IMPATT diode is capable of generating higher RF power density, while GaN IMPATT diode exhibits better noise behavior [3,9].…”

Section: Introductionmentioning

confidence: 99%

Influence of the anisotropy on the performance of D-band SiC IMPATT diodes

et al. 2014

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Numerical simulation has been made to predict the RF performance of \0001[ direction and \11 " 20[ direction p ? /n/n -/n ? (single drift region) 4H silicon carbide (4H-SiC) impact-ionization-avalanche-transit-time (IMPATT) diodes for operation at D-band frequencies. We observed that the output performance of 4H-SiC IMPATT diode is sensitive to the crystal direction of the onedimensional current flow. The simulation results show that \0001[ direction 4H-SiC IMPATT diode provides larger breakdown voltage for its lower electron and hole ionization rates and higher dc-to-rf conversion efficiency (g) for its higher ratio of drift zone voltage drop (V D ) to breakdown voltage (V B ) compared with those for \11 " 20[ direction 4H-SiC IMPATT diode, which lead to highermillimeter-wave power output for \0001[ direction 4H-SiC IMPATT compared to \11 " 20[ direction. However, the quality factor Q for the \11 " 20[ direction 4H-SiC IMPATT diode is lower than that of \0001[ direction, which implies that the \11 " 20[ direction 4H-SiC IMPATT diode exhibits better stability and higher growth rate of microwave oscillation compared with \0001[ direction 4H-SiC IMPATT diode.

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“…These devices generate output power by providing a Negative Differential Resistance (NDR) at the frequency of interest, hence compensating, or even overcompensating the inherent losses in a resonant circuit [270]. Relevant devices of this kind are the Resonanttunneling Diodes (RTDs), Tunnel-injection Transit-Time (TUNNETT) devices, Transferred-Electron Devices (TEDs, also called Gunn devices), Superlattice Electronic Devicess (SLEDs) or IMPact Ionization Avalanche TransitTime (IMPATT) diodes [271].…”

Section: Electronic Sourcesmentioning

confidence: 99%

“…Actually, MMICs output powers in the low range of THz band is reaching nowadays 50 mW at 200 GHz [278], and 10 mW [279] beyond the 300 GHz barrier. These power levels were so far only possible with two terminal active devices such as IMPATT diodes [271], [264].…”

Section: Electronic Sourcesmentioning

confidence: 99%

Analysis and design of efficient passive components for the millimeter-wave and THz bands

Verdú¹,

Antonio²

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To my parents, brother and sister."Success is peace of mind which is a direct result of self-satisfaction in knowing you made the effort to become the best of which you are capable."Jonh Wooden "Lo que con mucho trabajo se adquiere, más se ama." Aristóteles AgradecimientosLa realización de esta tesis ha implicado no pocos años de trabajo y esfuerzo. Durante este importante periodo de mi vida han sido muchas las personas han estado a mi lado, brindándome su apoyo, ayuda, cariño y amor. Ya sea de una forma u otra, todas estas personas han contribuido a que este trabajo haya sido posible dando como fruto esta tesis. A todos ellos, me gustaría dedicarles un agradecimiento muy especial de todo corazón.Sin duda alguna, debo dar las gracias en primer lugar a mi director de tesis Mariano Baquero. Mariano, has sido un padre para mí profesionalmente hablando. Te conocí como alumno en las clases de Microondas, en las cuales me abriste la puerta a un conocimiento que me fascinó.Recuerdo perfectamente cuando fui a verte para preguntarte si podrías dirigirme el Proyecto Final de Carrera, y desde ese año 2009 hemos estado trabajando juntos. Quiero agradecerte no sólo haberme dado la oportunidad de trabajar en cada momento en elárea que más me ha gustado, sino el haberte preocupado por mí a nivel personal, velando siempre por mis intereses, ayudándome a desarrollarme personal y profesionalmente. Extiendo en este sentido mi agradecimiento a Miguel Ferrando. Si Mariano es el padre, tu serías sin duda el abuelo. Sin tu ayuda, la beca para la realización de esta tesis y los proyectos que han respaldado la misma no hubieran sido posibles. Tu esfuerzo ha permitido que el Grupo de Radiación Electromagnética (GRE) esté hoy dónde esta y que sus miembros nos beneficiemos de un entorno de trabajo excelente, produciendo trabajo de calidad. Debo agradecerte también tus siempre innovadoras ideas, algunas de las cuales se han convertido en una realidad plasmada en esta tesis.Una mención especial merece Daniel Sánchez. Dani, aunque tu nombre no figure como co-director bien sabes que podría estarlo. Jamás podré agradecerte lo suficiente la ayuda que me has prestado. Cuántas horas dedicadas a enseñarme en un sin fin de aspectos sin esperar nada a cambio, apoyándome también en los momentos difíciles, siempre presentes en una tesis. Bien sabes que lo mismo has hecho con cada uno tus compañeros, por eso eres el pilar del GRE Dani.Otra persona a la que estoy muy agradecido es a Vicente Boria. Tu activa colaboración en la dirección de esta tesis ha sido indispensable para la consecución de los resultados más relevantes de la misma. Sugeriste muy acertadamente una estancia en la Queen's University of Belfast, y me abriste la puerta a nuevas líneas de investigación en las cuales seguimos trabajando actualmente. Gracias por preocuparte por mi a nivel profesional y personal.En elámbito anterior, extiendo los agradecimientos a todo el GRE. It is also very important for me to acknowledge Prof. Vince Fusco. Thank you for hosting me in your group in Belfast ...

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Potentiality of IMPATT Devices as Terahertz Source: An Avalanche Response Time-based Approach to Determine the Upper Cut-off Frequency Limits

Cited by 39 publications

References 31 publications

Prospects of IMPATT devices based on wide bandgap semiconductors as potential terahertz sources

Prospects of IMPATT devices based on wide bandgap semiconductors as potential terahertz sources

Influence of the anisotropy on the performance of D-band SiC IMPATT diodes

Analysis and design of efficient passive components for the millimeter-wave and THz bands

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