Potential of alternate dielectrics for single and composite film FET gate applications

Balk, P.

doi:10.1007/bf02661167

Cited by 11 publications

(2 citation statements)

References 25 publications

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“…On the other hand, suppression of the undesirable charge injection from the metal electrode demands a high internal barrier, necessitating the use of a large bandgap material. These conflicting requirements are best met by using a three layer system [1,2] containing a thin storage layer in addition to the high E -large bandgap outer insulator. Kahng and Sze's original device with a thin metal storage film [3], that of Laibowitz and Stiles with small metal particles [4], Horiuchis structure with Si particles [5] as well as Shuskus' Hf02-HfN-Sio2 system [6] belong to this category.…”

Section: Maos Non-volatile Memory Structures With Lower Bandgap Storamentioning

confidence: 99%

Maos non-volatile memory structures with lower bandgap storage layer

Stephany¹,

Schumacher²,

Balk³

1978

Rev. Phys. Appl. (Paris)

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Section: Maos Non-volatile Memory Structures With Lower Bandgap Storamentioning

confidence: 99%

Maos non-volatile memory structures with lower bandgap storage layer

Stephany¹,

Schumacher²,

Balk³

1978

Rev. Phys. Appl. (Paris)

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“…Storage of injected charge carriers is a phenomenon that may be expected to occur quite generally in metal-insulator-silicon structures with layered dielectrics. It has been explored thoroughly in only a few systems, notably in the metal-Si~N4-SiO2-Si (MNOS) and metal-A12Os-SiO2-Si (MAOS) structures, where field effect transistors with such gate systems yield useful electrically alterable nonvolatile storage devices (1,2).…”

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confidence: 99%

Conduction and Charging Behavior in MA(O)S‐Systems

Kampshoff¹,

Stephany²,

Balk³

1977

J. Electrochem. Soc.

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Measurements were made of I-V and C-V characteristics of metal-Al~O~silicon capacitors in the dark. The A12Os layers were deposited pyrolytically at temperatures between 700 r and 950~ on substrates of both conductivity types; some of the samples were subjected to a final O2 anneal. The observed dependence of the conduction on the electrode material indicates that the process is injection limited and that electrons are the major carriers. From the magnitude of the effective barrier heights and the relatively weak temperature dependence of the currents, it is concluded that in all cases the injection takes place via a trap-assisted tunneling mechanism. The buildup of space charge in the insulator has a pronounced effect on the magnitude of the Conductivity. The same behavior was observed on MAOS capacitors with a purposely grown 2.5 nm SiO2 film.

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Dielectrics for Field Effect Technology

Balk

1995

Advanced Materials

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The availability of stable MOS gate systems and high density storage capacitors is an essential requirement for the development of the field effect storage technology. For standard MOSFET gates this role has been fulfilled by SiO, grown by thermal oxidation of the Si substrate. Improved insight into the properties of the Si/SiO, system and perfection of its growth technology will secure its role in Si MOSFET memories for the future. For charge storage application the stability requirements are less demanding. However, here SiO, is not able to provide sufficient capacity. In this case higher dielectric constant materials (Si,N, or Ta,O,) have to take over. Particularly attractive appears the use of ferroelectrics. These dielectric materials not only offer a high dielectric constant, but also the perspective of providing non-volatile storage in capacitor structures.

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Potential of alternate dielectrics for single and composite film FET gate applications

Cited by 11 publications

References 25 publications

Maos non-volatile memory structures with lower bandgap storage layer

Maos non-volatile memory structures with lower bandgap storage layer

Conduction and Charging Behavior in MA(O)S‐Systems

Dielectrics for Field Effect Technology

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