Potential-induced degradation of n-type crystalline Si photovoltaic modules in practical outdoor systems

Hara, Kohjiro; Akitomi, Minoru; Masuda, Atsushi; Chiba, Yasuo

doi:10.7567/jjap.57.117102

Cited by 8 publications

(5 citation statements)

References 42 publications

(105 reference statements)

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“…Field exposure tests have been conducted to investigate the mechanism of PV module degradation. [5][6][7][8][9][10][11][12] However, field exposure tests require a very long time (10-20 years) for degradation. Thus, accelerated-test method was adopted to evaluate the PV module degradation, 13) which stimulates the PV degradation by subjecting to harsh conditions, including mechanical load, 14) ultraviolet (UV) irradiation, [15][16][17] temperature cycling, 18,19) damp-heat (DH), [20][21][22] and high voltage (potential induced degradation; PID).…”

Section: Introductionmentioning

confidence: 99%

Acetic acid detection in photovoltaic modules during ultraviolet irradiation and damp-heat combined tests

Asano¹,

Hamaoka²,

Jonai³

et al. 2022

Jpn. J. Appl. Phys.

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In this study, we evaluated the acetic acid generation in photovoltaic (PV) modules during an accelerated reliability test that combines ultraviolet (UV) irradiation and damp-heat (DH) using tin film sensors. We employed a tin film to detect acetic acid through the change in optical reflectance due to the chemical reaction from metallic tin to transparent tin tetraacetate. The relative reflectance of the tin film sensors laminated in a PV module was measured and used as an indicator of acetic acid generated during the reliability test. Consequently, we achieved non-destructive detection of a small amount of acetic acid generated during the UV irradiation stage of the UV+DH combined test with high spatial and temporal resolution using tin film sensors.

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Section: Introductionmentioning

confidence: 99%

Acetic acid detection in photovoltaic modules during ultraviolet irradiation and damp-heat combined tests

Asano¹,

Hamaoka²,

Jonai³

et al. 2022

Jpn. J. Appl. Phys.

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“…10,11 The mechanisms of the PID are considered to be different between p-type and n-type solar cells, although both favor high-temperature humid conditions. [12][13][14][15] The PID in p-type solar cells causes a serious performance reduction because of shunting in solar cells (PID-s), 10,11 which is associated with the transport of sodium ions (Na + ) from the cover glass through the encapsulant into the pn junction under negative high-voltage conditions. [16][17][18][19][20][21][22][23] Conversely, the prevalent mechanism for the PID in n-type IBC solar cells is the surface polarization (PID-p), which is associated with surface recombination of minority carriers arising from accumulating electrons or holes in the silicon nitride (SiN x ) stacked on the silicon oxide (SiO 2 ) anti-reflective coating (ARC) layers deposited on the front side of the n-type solar cells.…”

Section: Introductionmentioning

confidence: 99%

“…14,15,[24][25][26][27][28][29] The PID-p in n-type IBC solar cells occurs under positive potential conditions, 9,[30][31][32] whereas the PID-p in n-type solar cells with a front p + emitter is observed under negative potential conditions. 14,15,[24][25][26][27][28][29] Both can be explained by the surface recombination of minority carriers arising from the charge fixed on the silicon dangling bonds back-bonded with nitrogen, known as "K centers," in the SiN x ARC layer. 9,24,25 If the ARC of p-type c-Si solar cells is constructed by the SiN x stacked on SiO 2 layers, PID-p can occur even in the p-type c-Si solar cells by applying a high positive voltage.…”

Section: Introductionmentioning

confidence: 99%

“…9,24,25 If the ARC of p-type c-Si solar cells is constructed by the SiN x stacked on SiO 2 layers, PID-p can occur even in the p-type c-Si solar cells by applying a high positive voltage. 33 Moreover, the PID-p results in a performance reduction under low system voltage conditions, for example, around ±100 V. 9,15,[30][31][32] We have reported that the annual degradation rates of the highefficiency PV modules, such as n-type IBC and SHJ single-crystalline (sc-Si) technologies, tend to be relatively higher than the conventional PV modules using Al-BSF c-Si solar cells. 30 The n-type IBC module installed under positive electrical potential showed clear performance degradation arising from the PID-p. 30 In this study, we investigate the electrical performance of IBC PV modules over 6 years and compare this with the electrical performance of the PV modules using conventional p-type Al-BSF sc-Si solar cells, based on both indoor and outdoor measurements.…”

Section: Introductionmentioning

confidence: 99%

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Potential‐induced degradation in photovoltaic modules composed of interdigitated back contact solar cells in photovoltaic systems under actual operating conditions

Ishii

Choi

Sato

et al. 2020

Progress in Photovoltaics

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Polarization-type potential-induced degradation (PID-p) of photovoltaic (PV) modules composed of n-type interdigitated back contact (IBC) solar cells can decrease the performance of the PV modules under positive potential conditions. The purpose of this study is to observe and describe the reduction and stabilization of the electrical performance of every PV module installed in an operating PV system with the progress of the PID-p over a time duration of 6 years. The direct current circuit of the investigated PV system is not grounded. Therefore, all the PV strings are under floating potential conditions. The results show that the performance of the n-type IBC PV modules exhibits a two-step degradation. In the first step of degradation, the PV performance at positive potential decreases with increasing the PV module potential, whereas the PV modules at negative potential show little performance degradation. The PV performance reduction due to PID-p is mainly caused by the decreases in both open-circuit voltage (V OC) and short circuit current (I SC). A PV performance reduction, which principally arises from the decrease in I SC , is observed at every PV module in the PV strings regardless of the PV module potential in the second step of degradation. Therefore, solar cell manufacturers who produce n-type IBC, as well as those producing passivated emitters and rear totally diffused solar cells, are advised that processes to prevent the PID-p are required.

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“…

Over the past years potential-induced degradation (PID) has been observed in photovoltaic (PV) power plants worldwide for various types of solar cells and module technologies. [1][2][3] Typically, severe performance losses occur as a critical electric field strength is applied across the dielectric passivation coating of the solar cell. Such electric fields are induced in series connected module strings and depend crucially on the selection of module encapsulation materials, environmental conditions, and the particular cell type.

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confidence: 99%

Time‐Resolved Investigation of Transient Field Effect Passivation States during Potential‐Induced Degradation and Recovery of Bifacial Silicon Solar Cells

et al. 2021

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Various types of potential‐induced degradation (PID) with fundamentally different physical root causes have been observed recently ranging from shunting (PID‐s), corrosion (PID‐c) to degradation of surface passivation (PID‐p). Herein, PID‐p is investigated for the first time at the rear side of bifacial silicon solar cells with enhanced time‐resolution during degradation and recovery under simultaneous illumination. The tests reveal fast transient changes of rear‐side short‐circuit current within minutes and thus allow to understand the degradation process related to PID‐p. The short‐circuit current with rear‐side illumination first decreases significantly by more than 80 % resulting in an intermediate degraded state. Subsequently, it increases to a regenerated state. Under reversed bias, a total recovery of the cell parameters is observed and confirmed by I–V measurements under standard testing conditions (STCs). The underlying transient PID‐p degradation and recovery mechanism is well described by a PC‐1D simulation of the field‐induced band bending at the rear surface. Finally, a qualitative model involving the migration of mobile charged species and their impact on the charge equilibrium in the field effect passivation layer is presented. Thus, time‐resolved analysis of transient PID effects can serve as a clear characteristic for PID of polarization type.

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Potential-induced degradation of n-type crystalline Si photovoltaic modules in practical outdoor systems

Cited by 8 publications

References 42 publications

Acetic acid detection in photovoltaic modules during ultraviolet irradiation and damp-heat combined tests

Acetic acid detection in photovoltaic modules during ultraviolet irradiation and damp-heat combined tests

Potential‐induced degradation in photovoltaic modules composed of interdigitated back contact solar cells in photovoltaic systems under actual operating conditions

Time‐Resolved Investigation of Transient Field Effect Passivation States during Potential‐Induced Degradation and Recovery of Bifacial Silicon Solar Cells

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