Potential energy threshold of surface erosion on GaN by impact of slow highly charged heavy ions

Zhang, L.Q.; Zhang, C.H.; Yang, Yujue; Han, L.H.; Li, B.S.; Song, Shihua; Sun, Yizhuo; Jin, Yufeng

doi:10.1016/j.nimb.2010.11.043

Cited by 5 publications

(1 citation statement)

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“…A significant erosion of the surface was observed for a potential energy (defined as the sum of the ionizing energies) above 7 keV [14]. However, large fluencies in the range of 10 14 -10 16 ions/cm 2 used in the work of Zhang et al yield a pre-damaged surface area (due to unavoidable elastic ion collisions with surface atoms) which could strongly influence erosion driven by the potential energy of the HCI.…”

Section: Introductionmentioning

confidence: 98%

Response of GaN to energetic ion irradiation: conditions for ion track formation

Karlušić¹,

Kozubek²,

Lebius³

et al. 2015

J. Phys. D: Appl. Phys.

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We investigated the response of wurzite GaN thin films to energetic ion irradiation. Both swift heavy ions (92 MeV Xe 23+ , 23 MeV I 6+ ) and highly charged ions (100 keV Xe 40+ ) were used. After irradiation, the samples were investigated using atomic force microscopy, grazing incidence small angle X-ray scattering, Rutherford backscattering spectroscopy in channelling orientation and time of flight elastic recoil detection analysis. Only grazing incidence swift heavy ion irradiation induced changes on the surface of the GaN, when the appearance of nanoholes is accompanied by a notable loss of nitrogen. The results are discussed in the framework of the thermal spike model.

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Section: Introductionmentioning

confidence: 98%