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1996
DOI: 10.1103/physrevb.53.4926
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Potential-energy surface forH2dissociation over Pd(100)

Abstract: The potential energy surface (PES) of dissociative adsorption of H2 on Pd(100) is investigated using density functional theory and the full-potential linear augmented plane wave (FP-LAPW) method. Several dissociation pathways are identified which have a vanishing energy barrier. A pronounced dependence of the potential energy on "cartwheel" rotations of the molecular axis is found. The calculated PES shows no indication of the presence of a precursor state in front of the surface. Both results indicate that st… Show more

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Cited by 134 publications
(112 citation statements)
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References 35 publications
(69 reference statements)
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“…7c and d. While the dissociation path over the Pd on-top position on the clean surface is hindered by a barrier of height 0.15 eV [4] (Fig. 4b), the adsorbed sulfur leads to an increase in this barrier height to 1.3 eV (Fig.…”
Section: Dissociative Adsorption At a Sulfur-covered Transition Mmentioning
confidence: 99%
See 2 more Smart Citations
“…7c and d. While the dissociation path over the Pd on-top position on the clean surface is hindered by a barrier of height 0.15 eV [4] (Fig. 4b), the adsorbed sulfur leads to an increase in this barrier height to 1.3 eV (Fig.…”
Section: Dissociative Adsorption At a Sulfur-covered Transition Mmentioning
confidence: 99%
“…There are many different ways of illustrating the electronic factors that determine the reactivity of a particular system (see, e.g., Refs. [4,7,43,51,52]). Current studies have emphasized that the reactivity of surfaces cannot be solely understood by the electronic density of states at the Fermi level [53,54].…”
Section: Dissociative Adsorption At a Sulfur-covered Transition Mmentioning
confidence: 99%
See 1 more Smart Citation
“…A similar finding was obtained in a study by Wilke and Scheffler on the analogous H 2 ϩPd͑100͒ system. 54 Further we have done the calculations on a 3 layer slab with the H 2 on one side. For adsorption geometries only including surface sites, already a 2 layer slab gives good results.…”
Section: A Approximations and Convergencementioning
confidence: 99%
“…(t~H4J superficies I15 ,16] e na obtenção de propriedades de bulk dos ma teriaisJ17,18] Trabalhos recentes de aplicação do método sào encontrados nas rererências [19][20][21][22][23][24][25][26][27][28][29][30]. O nosso trabalho representa a primeira contrIbuição desse método para o estudo de defeitos e impurezas em sernicondutores.…”
Section: Introductionunclassified