Potential application of some wide band gap materials for UV dosimetry

Abstract

Properties of some wide band gap materials-natural and CVD diamonds-have been studied for their potential application in UV dosimetry, using methods of optically stimulated luminescence and thermoluminescence. The observed properties are compared with those of the previously studied AlN ceramics. From the OSL excitation spectra, it follows that spectral sensitivity of the studied materials falls mainly into the UVC range, OSL and TL emission spectra are located within the visible light region, thus suitable for usual photodetectors. OSL stimulation spectra of the studied materials have a continuous character and are located in a broad visible/near infrared spectral region implying that the stored signal is subjected to the optical bleaching in ambient light conditions. Dosimetric TL peaks of diamond materials are located in the 280-330 °C range, suitable for detection. No thermal fading of the stored OSL or TL signal at RT was observed in contrast to AlN, which is characterised by a high fading rate.

Helical Growth of Aluminum Nitride: New Insights into Its Growth Habit from Nanostructures to Single Crystals

“…Thus, it is important to understand the anisotropic growth mechanism of nanomaterials so that the desired nanostructures for specific applications can be synthesized via a rational and well-controlled synthesis strategy. For example, aluminum nitride (AlN), an important III–V semiconductor (a band gap of 6.2 eV), which is an attractive material because of its potential applications in UV-light-emitting diodes (UV-LEDs) 6 , UV dosimetry 7 , field emission devices 8 , and patterned flat panel display 9 . Therefore, novel one-dimensional (1D) AlN nanostructures are highly in demand.…”