2021
DOI: 10.1021/acsami.0c16939
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Postpassivation of Cs0.05(FA0.83MA0.17)0.95Pb(I0.83Br0.17)3 Perovskite Films with Tris(pentafluorophenyl)borane

Abstract: Passivating defects to suppress recombination is a valid tactic to improve the performance of third-generation perovskite-based solar cells. Pb0 is the primary defect in Pb-based perovskites. Here, tris­(pentafluorophenyl)­borane is inserted between the perovskite and spiro-OMeTAD layer in SnO2-based planar perovskite solar cells. The incorporation of tris­(pentafluorophenyl)­borane can effectively passivate Pb0 defects, decreasing recombination at the surface of the perovskite film. Additionally, the modifica… Show more

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Cited by 40 publications
(28 citation statements)
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References 51 publications
(88 reference statements)
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“…To examine the effect of the additive on the crystallinity of perovskite, we measured the X-ray diffraction (XRD) pattern of pristine, AMBN, and AMBNCl-modified perovskite films (Figure a). The diffraction peaks at 14.2° and 28.4° are attributed to the (110) and (220) crystal planes of perovskite . Compared with the pristine film, the intensity of perovskite diffraction peaks of the modified films is significantly increased.…”
Section: Resultsmentioning
confidence: 99%
“…To examine the effect of the additive on the crystallinity of perovskite, we measured the X-ray diffraction (XRD) pattern of pristine, AMBN, and AMBNCl-modified perovskite films (Figure a). The diffraction peaks at 14.2° and 28.4° are attributed to the (110) and (220) crystal planes of perovskite . Compared with the pristine film, the intensity of perovskite diffraction peaks of the modified films is significantly increased.…”
Section: Resultsmentioning
confidence: 99%
“…Compared to the reference film, the normalized PL intensity of L-α-P the based perovskite film on glass increases, while the normalized PL intensity of the L-α-P and KI based film is the highest (Figure c). The enhanced PL intensity can be ascribed to the improvement of film quality and the passivation of defects. , The TRPL decay curves (Figure d) were fitted by the biexponential function, i = A 1 exp­( −t /τ 1 ) + A 2 exp­(− t /τ 2 ), where A 1 and A 2 represent decay amplitudes and τ 1 and τ 2 represent a relatively fast decay time and a relatively slow decay time, respectively . The fast decay is related to trap-assisted nonradiative recombination, while the slow decay is related to radiative recombination. , The sample structure is glass/perovskite, and the fitting parameters are shown in Table S2, Supporting Information.…”
Section: Resultsmentioning
confidence: 99%
“…According to the Mott–Schottky curves (Figure a), the built-in potential ( V bi ) of the reference device is 1.08 V. In contrast, the L-α-P based and L-α-P and KI based devices show the increased V bi values of 1.12 and 1.15 V, respectively. The higher V bi value is beneficial for improving charge transport and collection and reducing charge accumulation. ,, The dark J–V measurements were employed to study leakage current in these devices. As shown in Figure b, after the introduction of additives, the dark current density decreases gradually, indicating that the leakage current decreases gradually, and the reduced leakage current is beneficial to the improvement of J sc …”
Section: Resultsmentioning
confidence: 99%
“…The solution process contains the thermal decomposition method, sol-gel method, deposition of synthesized SnO 2 nanoparticles (NPs), and commercialized SnO 2 colloidal precursors. [92][93][94] In the meantime, spin-coating, [95][96][97][98] spraycoating, [99][100][101] slot-die coating, 100,102,103 roll-to-roll microgravity printing, 104 blade-coating 105,106 and inkjet-printing 107,108 are valuable technologies to fabricate quality SnO 2 lms.…”
Section: Solution-processable Methodsmentioning
confidence: 99%