Postgrowth Tuning of the Bandgap of Single-Layer Molybdenum Disulfide Films by Sulfur/Selenium Exchange

Ma, Qiang; Isarraraz, Miguel; Wang, Chen S; Preciado, Edwin; Klee, Velveth; Bobek, Sarah; Yamaguchi, Kôichi; Li, Emily; Odenthal, Patrick; Nguyen, Ariana E.; Barroso, David; Sun, Dezheng; Palacio, Gretel von Son; Gomez, Michael J.; Nguyen, Andrew; Le, Duy; Pawin, Greg; Mann, John; Heinz, Tony F.; Rahman, Talat S.; Bartels, Ludwig

doi:10.1021/nn5004327

Cited by 109 publications

(85 citation statements)

References 40 publications

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“…An important possibility for the TMDC family is the use of alloys to continuously tune the band gap of the material between the stoichiometric end points. Monolayer TMDC alloys have already been investigated both theoretically [30][31] and experimentally [32][33][34][35][36][37][38][39]. In particular, Mo 1-x W x S 2 monolayers, the subject of the present paper, were investigated both optical and electrically by Chen et al [40][41].…”

Section: Introductionmentioning

confidence: 99%

Electronic band gaps and exciton binding energies in monolayerMoxW1−xS2transition metal dichalc

et al. 2016

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Using scanning tunneling spectroscopy (STS) and optical reflectance contrast measurements, we examine band-gap properties of single layers of transition metal dichalcogenide (TMDC) alloys: MoS 2 , Mo 0.5 W 0.5 S 2 , Mo 0.25 W 0.75 S 2 , Mo 0.1 W 0.9 S 2 , and WS 2 . The quasi-particle band gap, spin-orbit separation of the excitonic transitions at the K/K' point in the Brillouin zone, and binding energies of the A exciton are extracted from STS and optical data.The exciton binding energies change roughly linearly with tungsten concentration. For our samples on an insulating substrate, we report quasi-particle band gaps from 2.17 ± 0.04 eV (MoS 2 ) to 2.38 ± 0.06 eV (WS 2 ), with A exciton binding energies ranging from 310 to 420 meV.

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Section: Introductionmentioning

confidence: 99%

Electronic band gaps and exciton binding energies in monolayerMoxW1−xS2transition metal dichalc

et al. 2016

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“…Previous works about 2D MSSe are mainly focusing on CVD growth242526, however, there have been only a few works on controlled synthesis of MS x Se y alloys based on solution approach, which provides a efficient method for large-scale preparation and promising application. In addition, the photoelectronic properties of SnS 2− x Se x alloys with different chemical compositions have been rarely reported according to our knowledge.…”

mentioning

confidence: 99%

Ternary SnS2–xSex Alloys Nanosheets and Nanosheet Assemblies with Tunable Chemical Compositions and Band Gaps for Photodetector Applications

et al. 2015

Sci Rep

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Ternary metal dichalcogenides alloys exhibit compositionally tunable optical properties and electronic structure, and therefore, band gap engineering by controllable doping would provide a powerful approach to promote their physical and chemical properties. Herein we obtained ternary SnS2−xSex alloys with tunable chemical compositions and optical properties via a simple one-step solvothermal process. Raman scattering and UV-vis-NIR absorption spectra reveal the composition-related optical features, and the band gaps can be discretely modulated from 2.23 to 1.29 eV with the increase of Se content. The variation tendency of band gap was also confirmed by first-principles calculations. The change of composition results in the difference of crystal structure as well as morphology for SnS2−xSex solid solution, namely, nanosheets assemblies or nanosheet. The photoelectrochemical measurements indicate that the performance of ternary SnS2−xSex alloys depends on their band structures and morphology characteristics. Furthermore, SnS2−xSex photodetectors present high photoresponsivity with a maximum of 35 mA W−1 and good light stability in a wide range of spectral response from ultraviolet to visible light, which renders them promising candidates for a variety of optoelectronic applications.

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“…[64] Different from doping in the growth process, atom substitution can be conducted after growth of MoS2, and annealing using the dopant sources in the furnace is also efficient to turn band structure of the material. [65] Except for chalcogenide atom substitution, transition metal atoms can also be substituted using CVT methods to modulate properties of MoS2 and these alloys shows good thermodynamic stability at ambient conditions. [55,66] However, transition metal atoms are harder to be replaced using CVD methods because they are more stable in the crystal structure and particular electrical and optoelectronic properties may be degraded in CVD grown alloys.…”

Section: Mos2 Alloyingmentioning

confidence: 99%

Growth of Transition Metal Dichalcogenides and Directly Modulating Their Properties by Chemical Vapor Deposition

Tong¹,

Liu²,

Renli³

et al. 2017

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The layered structure of transition metal dichalcogenides (TMDs) gives rise to many novel properties for functional applications in a wide range of fields. However, successful synthesis of TMDs and directly modulating properties of TMDs during the growth process are facing great challenges, which limits their future practical applications. In this review, we focus on current state of the art chemical vapor deposition (CVD) synthesis of TMDs alloys, convenient methods to modulate properties of TMDs by CVD. Then, TMDs-based lateral and vertical heterostructures utilizing CVD methods are reviewed. Finally, we summarize patterned growth of TMDs briefly.

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Postgrowth Tuning of the Bandgap of Single-Layer Molybdenum Disulfide Films by Sulfur/Selenium Exchange

Cited by 109 publications

References 40 publications

Electronic band gaps and exciton binding energies in monolayerMoxW1−xS2transition metal dichalc

Electronic band gaps and exciton binding energies in monolayerMoxW1−xS2transition metal dichalc

Ternary SnS2–xSex Alloys Nanosheets and Nanosheet Assemblies with Tunable Chemical Compositions and Band Gaps for Photodetector Applications

Growth of Transition Metal Dichalcogenides and Directly Modulating Their Properties by Chemical Vapor Deposition

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