1991
DOI: 10.1016/0925-9635(91)90010-8
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Post-processing of diamond and diamond films: a review of some Harwell work

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Cited by 51 publications
(14 citation statements)
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“…The formation of substitutional Li with acceptor character was also regarded as possible [5]. Since on the experimental side electrical measurements on Li-implanted diamonds [6], [7] did show increased conductivity, lattice site determination would be useful for supplementary information. Direct site determinations of Li in diamond are rare since standard methods like Rutherford backscattering channelling or particle-induced X-ray-emission channelling fail in the case of Li owing to its low atomic number.…”
Section: Introductionmentioning
confidence: 99%
“…The formation of substitutional Li with acceptor character was also regarded as possible [5]. Since on the experimental side electrical measurements on Li-implanted diamonds [6], [7] did show increased conductivity, lattice site determination would be useful for supplementary information. Direct site determinations of Li in diamond are rare since standard methods like Rutherford backscattering channelling or particle-induced X-ray-emission channelling fail in the case of Li owing to its low atomic number.…”
Section: Introductionmentioning
confidence: 99%
“…Much work has been devoted to the study of Li incorporation and diffusion in diamond; Incorporation of Li in diamond was attempted during CVD growth [6,7], by ion implantation [8][9][10][11][12][13] and by diffusion with and without an electrical field [14,15]. In most of these studies SIMS profiling was applied, although other scientists have worked with the optical and electrical effects of the in-diffused Li.…”
Section: Literature Surveymentioning
confidence: 99%
“…Many other attempts to implant Li into diamond were carried out, however none of them presents direct and convincing proof for n-type conductivity related to real chemical doping [8][9][10][11]. Li implantations were also performed in diamonds at elevated temperatures [10][11][12][13].…”
Section: Literature Surveymentioning
confidence: 99%
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“…Lee et al 20 reported that carbon ion implantation at medium energy ͑5-25 keV͒ into diamond substrates led to the growth of polycrystalline diamond with a very high density of extended defects. In spite of the many studies of carbon ion implantation into foreign substrates, [21][22][23][24] no definitive evidence for diamond formation was obtained. Recently, Guo et al 25 reported the formation of diamond microcrystallites on Si by means of hydrocarbon and hydrogen ion bombardment, but only x-ray photoelectron spectroscopic characterization was given to support the results.…”
Section: Introductionmentioning
confidence: 99%