Post-deposition annealing effect on In2S3 thin films deposited using SILAR technique

Ramadurai, Ranjith; John, Teny Theresa; Kartha, C. Sudha; Vijayakumar, K. P.; Abe, T.; Kashiwaba, Y.

doi:10.1016/j.mssp.2006.06.001

Cited by 29 publications

(18 citation statements)

References 22 publications

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“…In 2 S 3 layers have been synthesized using a variety of chemical as well as physical techniques. These include chemical vapour deposition [6], atomic layer epitaxy [7], chemical spray pyrolysis (CSP) [8], chemical bath deposition [9], metal-organic chemical vapordeposition [10], thermal evaporation [11], and successive ionic layer adsorption and reaction [12,13]. In this study, In 2 S 3 films were formed on glass substrates by vacuum thermal evaporation.…”

Section: Introductionmentioning

confidence: 99%

Characterization of Thermally Evaporated In₂S₃ Films for Solar Cell Application

Ramya

Reddy

2013

Conference Papers in Energy

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Indium sulphide (In 2 S 3 ) is one of the best alternatives for CdS as a buffer layer in CuInGaSe 2 -based thin film heterojunction solar cells. In this work, In 2 S 3 films were prepared by thermal evaporation of In 2 S 3 powder onto glass substrates at different temperatures that vary from 200 ∘ C to 300 ∘ C. The as-grown films were characterized using appropriate techniques to evaluate the chemical and physical properties. The X-ray diffraction analysis revealed that all the films were polycrystalline in nature with a strong (109) plane as the preferred orientation and consisted of tetragonal and cubic phases. The crystallite size and the lattice parameters are calculated. The scanning electron micrographs indicated smooth surface with fine grains. The optical analysis revealed a high optical transmittance for the layers with a direct optical band gap that varied in the range of 1.8-2.2 eV.

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Section: Introductionmentioning

confidence: 99%

Characterization of Thermally Evaporated In₂S₃ Films for Solar Cell Application

Ramya

Reddy

2013

Conference Papers in Energy

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“…Barreau et al have reported similar results in the case of samples using CBD when the substrate is dipped for longer time in water [11]. XPS analysis on In 2 S 3 films, prepared using SILAR, also suggests that films prepared with longer dipping time in water contains more oxygen [20]. During the film formation with longer dipping time in water, the grain growth is also affected leading to small grains and poor crystallinity.…”

Section: Resultsmentioning

confidence: 64%

“…It has been reported earlier that indium sulfide films prepared using InCl 3 at room tem-perature through CBD and SILAR methods were also amorphous [16,19,20]. It was also reported that samples prepared using this method at deposition times 2s and 6s in precursor solution could be made crystalline upon annealing at 400 0 C [20]. Annealing temperature (Ta) is very important in the crystalline properties of the films.…”

Section: Resultsmentioning

confidence: 93%

“…The films can be synthesized using several techniques such as chemical spray pyrolysis (CSP) [14], atomic layer epitaxy (ALE) [15], chemical bath deposition (CBD) [16], chemical vapor deposition (CVD) [11], RF sputtering [17], thermal evaporation [2], organometallic chemical evaporation [18] and Successive Ionic Layer Adsorption and Reaction (SILAR) [19,20]. In the present work, we prepared -In 2 S 3 thin films using SILAR deposition technique, which is a convenient and adaptable method for thin film deposition.…”

Section: Introductionmentioning

confidence: 99%

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Structural and Optical Properties of Indium Sulfide Thin Films Prepared by Silar Technique

Warrier¹,

John²,

Vijayakumar³

et al. 2009

Open Cond Matt Phy J

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Indium sulfide thin films were prepared using a relatively new, simple and inexpensive technique called Successive Ionic Layer Adsorption and Reaction (SILAR). SILAR deposition conditions for obtaining good quality -Indium sulfide (In 2 S 3 ) films were optimized. The films were structurally and optically characterized using X-ray diffraction (XRD), photosensitivity measurements and optical absorption studies. Effects of using different precursor solutions, indium chloride (InCl 3 ) and indium nitrate (In(NO 3 ) 3 ) and post deposition annealing were also studied. Films fabricated with In(NO 3 ) 3 showed good crystallinity without any post deposition annealing while films prepared using InCl 3 were crystalline only when annealed at 400 0 C. The band gap of the films varied from 2.32 to 2.92 eV depending on the deposition conditions.

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“…2,3,4,5 It is intrinsically an n-type 6,7 semiconductor with bandgap in the vicinity of 2.0 eV 1,12,15 . But there is still controversy on whether it is a direct 8,9 or indirect 10,11 bandgap material.…”

Section: Introductionmentioning

confidence: 99%

High Optical Absorption of Indium Sulfide Nanorod Arrays Formed by Glancing Angle Deposition

et al. 2009

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Indium (III) sulfide has recently attracted much attention due to its potential in optical sensors as a photoconducting material and in photovoltaic applications as a wide direct bandgap material. On the other hand, optical absorption properties are key parameters in developing high photosensitivity photodetectors and high efficiency solar cells. We show that indium sulfide nanorod arrays produced by glancing angle deposition technique have superior absorption and low reflectance properties compared to conventional flat thin film counterparts. We observed an optical absorption value of approximately 96% for nanorods in contrast to 80% for conventional amorphous-to-polycrystalline thin films of indium sulfide. A photoconductivity response was also observed in the nanorod samples, whereas no measurable photoresponse was detected in conventional thin films. We give a preliminary description of the enhanced light absorption properties of the nanorods by using Shirley-George model which predicts diffusion of light by the roughness on the surface.

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Post-deposition annealing effect on In2S3 thin films deposited using SILAR technique

Cited by 29 publications

References 22 publications

Characterization of Thermally Evaporated In₂S₃ Films for Solar Cell Application

Characterization of Thermally Evaporated In₂S₃ Films for Solar Cell Application

Structural and Optical Properties of Indium Sulfide Thin Films Prepared by Silar Technique

High Optical Absorption of Indium Sulfide Nanorod Arrays Formed by Glancing Angle Deposition

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Post-deposition annealing effect on In2S3 thin films deposited using SILAR technique

Cited by 29 publications

References 22 publications

Characterization of Thermally Evaporated In2S3 Films for Solar Cell Application

Characterization of Thermally Evaporated In2S3 Films for Solar Cell Application

Structural and Optical Properties of Indium Sulfide Thin Films Prepared by Silar Technique

High Optical Absorption of Indium Sulfide Nanorod Arrays Formed by Glancing Angle Deposition

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Product

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Characterization of Thermally Evaporated In₂S₃ Films for Solar Cell Application

Characterization of Thermally Evaporated In₂S₃ Films for Solar Cell Application