Post-deposition annealing challenges for ALD Al0.5Si0.5Ox/n-GaN MOS devices

Fernandes Paes Pinto Rocha, P.; Vauche, L.; Bedjaoui, M.; Cadot, S.; Mohamad, B.; Vandendaele, W.; Martinez, E.; Gauthier, N.; Pierre, F.; Grampeix, H.; Lefèvre, G.; Salem, B.; Sousa, V.

doi:10.1016/j.sse.2023.108780

Solid-State Electronics

2023

DOI: 10.1016/j.sse.2023.108780

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Post-deposition annealing challenges for ALD Al0.5Si0.5Ox/n-GaN MOS devices

P. Fernandes Paes Pinto Rocha,

L. Vauche,

M. Bedjaoui

et al.

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Post-deposition annealing challenges for ALD Al0.5Si0.5Ox/n-GaN MOS devices

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References 16 publications

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