Post-breakdown electrical characterization of ultrathin SiO2 films with conductive atomic force microscopy

Porti, M.; Nafrı́a, Montserrat; Aymerich, X.; Olbrich, Alexander; Ebersberger, B.

doi:10.1088/0957-4484/13/3/329

Cited by 17 publications

(25 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[47][48][49] The observable dielectric parameters, including E B , J (leakage current density), and e (dielectric permittivity) are easily measured in two terminal, planar metal-insulator-metal(semiconductor) MIM(S) devices. [1] One of the primary effects of SAMs on the response of MIM(S) and OTFT devices the influence of a proximate molecular dipole moment on the semiconductor electron affinity or on the metal work function.…”

Section: Dielectrics For Tfts Operation and Requirementsmentioning

confidence: 99%

Molecular Self‐Assembled Monolayers and Multilayers for Organic and Unconventional Inorganic Thin‐Film Transistor Applications

DiBenedetto¹,

Facchetti²,

Ratner³

et al. 2009

Advanced Materials

572

544

View full text Add to dashboard Cite

Principal goals in organic thin‐film transistor (OTFT) gate dielectric research include achieving: (i) low gate leakage currents and good chemical/thermal stability, (ii) minimized interface trap state densities to maximize charge transport efficiency, (iii) compatibility with both p‐ and n‐ channel organic semiconductors, (iv) enhanced capacitance to lower OTFT operating voltages, and (v) efficient fabrication via solution‐phase processing methods. In this Review, we focus on a prominent class of alternative gate dielectric materials: self‐assembled monolayers (SAMs) and multilayers (SAMTs) of organic molecules having good insulating properties and large capacitance values, requisite properties for addressing these challenges. We first describe the formation and properties of SAMs on various surfaces (metals and oxides), followed by a discussion of fundamental factors governing charge transport through SAMs. The last section focuses on the roles that SAMs and SAMTs play in OTFTs, such as surface treatments, gate dielectrics, and finally as the semiconductor layer in ultra‐thin OTFTs.

show abstract

Section: Dielectrics For Tfts Operation and Requirementsmentioning

confidence: 99%

Molecular Self‐Assembled Monolayers and Multilayers for Organic and Unconventional Inorganic Thin‐Film Transistor Applications

DiBenedetto¹,

Facchetti²,

Ratner³

et al. 2009

Advanced Materials

572

544

View full text Add to dashboard Cite

show abstract

“…This conductance oscillation might be attributed to charge trapping and de-trapping in the Si surface. The number of oscillation is proportional to the number of traps that the higher strain in thinner oxide films induces more oxide traps which are likely to become weak spots during stress [22,23]. …”

Section: Contributed Articlementioning

confidence: 99%

On dot and out of dot electrical characteristics of silicon oxide nanodots patterned by scanning probe lithography

Hutagalung

Darsono

2009

Phys. Status Solidi (c)

View full text Add to dashboard Cite

Silicon oxide nanodot arrays were grown on pre‐cleaned silicon (100) substrate by scanning probe nanolithography. In this study, a conductive AFM was used to fabricate nanoscale oxide dots in humidity controlled environment. The AFM is equipped with a nanotechnology software package providing the control of tip‐sample voltage and tip motion according to pre‐designed patterns. The surface topography and size of obtained patterns (diameter and height) were investigated by a noncontact AFM mode. A series of five silicon oxide nanodot array with diameter in the range of 146.05‐247.65 nm and height 2.14‐4.87 nm had been successfully fabricated. Meanwhile, a contact AFM mode was used to investigate the localized I‐V characteristics on the dots and out of dot position. It was found, the on dot characteristics are highly nonohmic due to potential barrier interface between silicon oxide and silicon substrate. However, the out of dot characteristic is linear indicates an ohmic contact between AFM tip and sample. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

“…In general, scanning probe microscopy with conductive tips comprises several operation modes suitable to study the local electrical properties as well as the morphological properties of dielectric layers. So, for example, conductive scanning force microscopy was used to examine the gate oxide integrity, thickness variations, intrinsic defects, the distribution of weak spots and the evolution of the intrinsic breakdown [12][13][14]. It combines the advantages of an improved lateral resolution of the electrical characterization compared to standard tests on metaloxide-semiconductor capacitors with a reduced effort of the preparation for the structural examination compared to methods such as transmission electron microscopy.…”

Section: Introductionmentioning

confidence: 99%

Charge storage in silicon-implanted silicondioxide layers examined by scanning probe microscopy

et al. 2006

View full text Add to dashboard Cite

Post-breakdown electrical characterization of ultrathin SiO2 films with conductive atomic force microscopy

Cited by 17 publications

References 12 publications

Molecular Self‐Assembled Monolayers and Multilayers for Organic and Unconventional Inorganic Thin‐Film Transistor Applications

Molecular Self‐Assembled Monolayers and Multilayers for Organic and Unconventional Inorganic Thin‐Film Transistor Applications

On dot and out of dot electrical characteristics of silicon oxide nanodots patterned by scanning probe lithography

Charge storage in silicon-implanted silicondioxide layers examined by scanning probe microscopy

Contact Info

Product

Resources

About