Post-Annealing Temperature Effect on ZnO Nanostructures Growth on Porous Silicon

Abstract

In this study, ZnO nanostructures were synthesized on porous silicon (PSi) substrate using hydrothermal immersion method. Different post-annealing temperatures were varied from 300°C to 600°C. Surface morphology was studied by field emission scanning electron microscopy. It shows that a better shape was produce at annealing temperatures of 500°C. Structural studies of ZnO nanostructure were implemented using X-ray diffraction grating. The result shows post-annealing can influence the crystallinty of ZnO. Photoluminescence spectra were used to study the optical properties of ZnO nanostructure. The result shows that peak corresponds to ZnO nanostructures are appeared in UV range. Besides, broad peaks are also appeared in visible range which is attributed to structural defects and PSi substrate.