Post-annealing effect of YIG ferrite thin-films epitaxially grown by reactive sputtering

Abstract

Amorphous Y-Fe-O ferrite thin-films were deposited on GGG (111) substrates using reactive RF magnetron sputtering with a Y 2.84 Fe 5.16 O 12 ferrite sintered target. After that, the thin-films were post-annealed in air at temperatures higher than 650 degrees Celsius for 3 hours to be crystallized. In the XRD diagrams, large diffraction peaks from only YIG ferrite (444) or (888) plane were observed in the samples postannealed at over 1050 degrees Celsius. The half value width (∆θ 50 ) in the rocking curve for YIG ferrite (888) was as small as 0.13 degrees. These results proved that the YIG ferrite films have been grown in hetero-epitaxial manner on GGG (111) substrate with high orientation. The YIG ferrite thin-films had reasonable saturation magnetization of 1.7 kG, relatively low coercivity of less than 5 Oe and small ∆H of around 70 Oe. The YIG ferrite thin-films are useful for microwave magnetic devices.

Spin current generation from sputtered Y3Fe5O12 films

“…In quest of controlling YIG thickness at nanometer scale, the growth of thin films by pulsed-laser deposition (PLD) [24][25][26][27][28] and sputtering [29][30][31][32][33][34][35][36][37][38][39][40][41][42][43] has attracted interest. In the sputtering method, the growth of crystals can be realized either by direct epitaxial growth via sputtering at high temperatures 29,32,36,38 or by sputtering at room temperature and subsequent post-annealing.…”

“…In the sputtering method, the growth of crystals can be realized either by direct epitaxial growth via sputtering at high temperatures 29,32,36,38 or by sputtering at room temperature and subsequent post-annealing. [30][31][32][33][34][35]38 Direct epitaxial growth at high temperature can provide crystals of excellent quality. 36 However, the sputtering rates are usually very low 30,34 and the sample quality sensitive to the conditions during deposition.…”

Problems of Creating Materials and Film Structures Based on Ferrits for Spintronics Devices

“…13), which corresponds to the value of the Hilbert damping parameter α = 2.8•10 -3 . The value of ∆H = 11 Oe for the considered submicron films of ferritegarnet, obtained by the method of ion-beam sputtering on silicon substrates, is 3-4 times higher than for films, by the method of pulsed laser evaporation PLD [44] and 3 times less than with films of ferrite garnets obtained by magnetron sputtering on GGG substrates [45].…”

Atomic Layer Deposition of Yttrium Iron Garnet Thin Films for 3D Magnetic Structures

“…This results in ∆B ip = 3.4 mT, which is comparable to values reported for thin films fabricated by pulsed laser deposition (∆B = 0.2 − 2.6 mT) 27,32,33 and sputtering (∆B = 0.6 − 7.0 mT). [34][35][36] Due to the conformal nature of atomic layer deposition, the substrates are not only covered on the top, but also on the sides, which is schematically depicted in Fig. 4, panel a. the possibility that also part of the back is covered would lead to an even better fit.…”