Possible structural and bond reconstruction in 2D ferromagnetic semiconductor VSe2 under uniaxial stress

Abstract

Two-dimensional (2D) semiconducting transition metal dichalcogenides have been used to make high-performance electronic, spintronic, and optoelectronic devices. Recently, room-temperature ferromagnetism and semiconducting property were found in 2D VSe2 nanoflakes (mechanically exfoliated onto silicon substrates capped with a oxide layer) and are attributed to the stable 2H-phase of VSe2 in the 2D limit. Here, our first-principles investigation show that a metastable semiconducting H' phase can be formed from the H VSe2 monolayer and some other similar when these 2D H-phase materials are under uniaxial stress or uniaxial strain. For the uniaxial stress (uniaxial strain) scheme, the H' phase will become lower in total energy than the H phase at the transition point. The calculated phonon spectra indicate the dynamical stability of the H' structures of VSe2, VS2, and CrS2, and the path of phase switching between the H and H' VSe2 phases is calculated. For VSe2, the H' phase has stronger ferromagnetism and its Currier temperature can be substantially enhanced by applying uniaxial stress or strain. Spin-resolved electronic structures, energy band edges, and effective carrier masses for both of the H and H' phases can be substantially changed by the applied uniaxial stress or strain, leading to huge effective masses near the band edge of the strained H' phase. Analysis indicated that the largest bond length difference between the H' and H phases can reach -19% for the Se3-Se3' bond, and there is noticeable covalence for the Se3-Se3' bond, which switches the valence of the nearby V atoms, leading to the enhanced ferromagnetism. Therefore, structural and bond reconstruction can be realized by applying uniaxial stress in 2D ferromagnetic H VSe2 and some other similar. These can be useful to seeking more insights and phenomena in such 2D materials for potential applications.