2005
DOI: 10.1002/cphc.200400643
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Possible Pathways of CVD Processes Leading to III–V Semiconductors via a Two‐Dimensional Growth

Abstract: Quantum-chemical calculations were carried out to shed more light upon possible first intermediates formed during chemical vapour deposition (CVD) processes leading to III-V semiconductors. Information about possible structures of intermediates and about thermodynamic properties in dependence of the temperature were collected. Because some of the systems calculated herein contain a substantial number of atoms (up to 144), it is limited to intermediates on the way to solid AIN. According to our suggestion, the … Show more

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Cited by 7 publications
(10 citation statements)
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“…Group 13–15 binary hydrides, [HMYH] n , together with their substituted analogues, hold the promise for acting as precursors for group 13–15 semiconducting nanomaterials 1. 2 Structural characteristics of the higher oligomeric cages of the hydrides are known to differ from their valence isoelectronic carbon analogues. The combination of 12 five‐membered rings and a variable number of six‐membered rings,3 familiar from fullerenes4 and carbon nanotubes,5 does not apply, since the five‐membered rings would require the presence of MM and YY bonds.…”
Section: B3lyp/tzvp Calculated Total Energies and Gibbs Free Energiesmentioning
confidence: 99%
“…Group 13–15 binary hydrides, [HMYH] n , together with their substituted analogues, hold the promise for acting as precursors for group 13–15 semiconducting nanomaterials 1. 2 Structural characteristics of the higher oligomeric cages of the hydrides are known to differ from their valence isoelectronic carbon analogues. The combination of 12 five‐membered rings and a variable number of six‐membered rings,3 familiar from fullerenes4 and carbon nanotubes,5 does not apply, since the five‐membered rings would require the presence of MM and YY bonds.…”
Section: B3lyp/tzvp Calculated Total Energies and Gibbs Free Energiesmentioning
confidence: 99%
“…Substitution of bromide by hydrogen results in the exothermic generation of both “handled” cages and “balustrade” ladder compounds. These compounds provide a viable alternative to the 2D structures theoretically considered by Himmel . Further theoretical and experimental studies in this direction are highly desirable and expected to be very promising.…”
Section: Discussionmentioning
confidence: 97%
“…8 It is argued that cross-linking reactions play a role in this conversion. 8 Possible pathways of formation of 2D AlN structures were considered in detail by Himmel 9 using theoretical methods.…”
Section: Introductionmentioning
confidence: 99%
“…They found that the formation of the [RGaNR′] 4 tetramer and [RGaNR′] 6 hexamer species is thermodynamically favorable in the gas phase at temperatures up to 720 K (R = H, R′ = CH 3 ) and 920-940 K (R = H, CH 3 , R′ = H). In a recent study on the possible pathways of CVD processes leading to III-V semiconductors, Himmel [18] simulated a two-dimensional growth of solid AlN under CVD conditions and proposed several intermediates. Based solely on the free energy calculations (kinetic factors are ignored), it is argued that higher Al n N n H m clusters can preferentially be formed at the surface and not in the gas phase at temperatures used in a CVD process.…”
Section: Decomposition Reactionsmentioning
confidence: 99%