Positron line-shape parameters and lifetimes for semiconductors: Systematics and temperature effects

Dannefaer, S.; Puff, Werner; Kerr, D.

doi:10.1103/physrevb.55.2182

Cited by 51 publications

(39 citation statements)

References 11 publications

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“…The R-parameter obtained for this fluence is 1.90970.002, which is higher than the as-grown and lower irradiated ion fluence. The variation of the R-parameter in the range 1.834-1.909 for the as-grown and high fluence irradiated sample in the present study corroborates with the earlier findings of R $1.8 attributed to the Ga vacancy [11,[14][15][16][17].…”

Section: Resultssupporting

confidence: 95%

Production of vacancy defects in high-energy Sn-ion irradiated GaN—Positron beam Doppler broadening study

Premchander

Abhaya

Sivaji

et al. 2006

Physica B: Condensed Matter

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Section: Resultssupporting

confidence: 95%

Production of vacancy defects in high-energy Sn-ion irradiated GaN—Positron beam Doppler broadening study

Premchander

Abhaya

Sivaji

et al. 2006

Physica B: Condensed Matter

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“…13 During the last decades, positron annihilation spectroscopy (PAS) has been employed for studying the defects in GaSb. [14][15][16][17][18][19][20][21] PAS is a versatile tool for studying point defects in semiconductors. 22 Its power is due to the selective sensitivity to vacancy defects and the insensitivity to conductivity and band gap width.…”

mentioning

confidence: 99%

Point defect balance in epitaxial GaSb

Segercrantz

Slotte

Makkonen

et al. 2014

Applied Physics Letters

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Positron annihilation spectroscopy in both conventional and coincidence Doppler broadening mode is used for studying the effect of growth conditions on the point defect balance in GaSb:Bi epitaxial layers grown by molecular beam epitaxy. Positron annihilation characteristics in GaSb are also calculated using density functional theory and compared to experimental results. We conclude that while the main positron trapping defect in bulk samples is the Ga antisite, the Ga vacancy is the most prominent trap in the samples grown by molecular beam epitaxy. The results suggest that the p–type conductivity is caused by different defects in GaSb grown with different methods.

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“…Positron studies of GaN and the III-nitrides started in the second half of the 1990s, with five papers published by different groups in 1997 (Cho et al, 1997;Dannefaer, Puff, and Kerr, 1997;Jorgensen et al, 1997;Saarinen et al, 1997;Suzuki et al, 1997). These reports give an instructive example of how a new material is studied and how the results can be interpreted just by using knowledge acquired in previous studies of another material.…”

Section: F the Gallium Vacancy And Its Complexes In Gallium Nitridementioning

confidence: 99%

Defect identification in semiconductors with positron annihilation: Experiment and theory

2013

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Positron annihilation spectroscopy is particularly suitable for studying vacancy-type defects in semiconductors. Combining state-of-the-art experimental and theoretical methods allows for detailed identification of the defects and their chemical surroundings. Also charge states and defect levels in the band gap are accessible. In this review the main experimental and theoretical analysis techniques are described. The usage of these methods is illustrated through examples in technologically important elemental and compound semiconductors. Future challenges include the analysis of noncrystalline materials and of transient defect-related phenomena.

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Positron line-shape parameters and lifetimes for semiconductors: Systematics and temperature effects

Cited by 51 publications

References 11 publications

Production of vacancy defects in high-energy Sn-ion irradiated GaN—Positron beam Doppler broadening study

Production of vacancy defects in high-energy Sn-ion irradiated GaN—Positron beam Doppler broadening study

Point defect balance in epitaxial GaSb

Defect identification in semiconductors with positron annihilation: Experiment and theory

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