Positron Diagnostics of Radiation Defects in Silicon Carbide

Girka, Oleksii; Mokrushin, A. D.; Svirida, S.V.; Шишкин, А. В.; Мохов, Е. Н.

doi:10.1007/978-3-642-84402-7_30

Cited by 8 publications

(8 citation statements)

References 3 publications

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“…This phenomenon is well known in the oxygen-implanted Si layers where the S-parameter for the vacancy-oxygen complexes is even lower than the bulk value [15]. The formation of nitrogen-vacancy complexes has also been observed in many other semiconductors, for example in Si [16,17], diamond [18] and SiC [19,20]. When the implanted sample was annealed at 1200 • C, the S-parameter drops to the value of the bulk state.…”

Section: S(e)mentioning

confidence: 80%

N⁺ion-implantation-induced defects in ZnO studied with a slow positron beam

Chen¹,

Sekiguchi

Yuan

et al. 2003

J. Phys.: Condens. Matter

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Undoped ZnO single crystals were implanted with multiple-energy N+ ions ranging from 50 to 380 keV with doses from 1012 to 1014 cm−2. Positron annihilation measurements show that vacancy defects are introduced in the implanted layers. The concentration of the vacancy defects increases with increasing ion dose. The annealing behaviour of the defects can be divided into four stages, which correspond to the formation and recovery of large vacancy clusters and the formation and disappearance of vacancy–impurity complexes, respectively. All the implantation-induced defects are removed by annealing at 1200 °C. Cathodoluminescence measurements show that the ion-implantation-induced defects act as nonradiative recombination centres to suppress the ultraviolet (UV) emission. After annealing, these defects disappear gradually and the UV emission reappears, which coincides with positron annihilation measurements. Hall measurements reveal that after N+ implantation, the ZnO layer still shows n-type conductivity.

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Section: S(e)mentioning

confidence: 80%

N⁺ion-implantation-induced defects in ZnO studied with a slow positron beam

Chen¹,

Sekiguchi

Yuan

et al. 2003

J. Phys.: Condens. Matter

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“…PAS is mostly applied to, and best understood, in metallic materials, but has found also application in the study of vacancy-type defects in semiconductors and has revealed information on ion-type acceptors via positron trapping at shallow Rydberg states [5]. Although elemental and compound (III-V, II-VI) semiconductors have been investigated in most experimental studies to date, SiC has recently attracted increased interest [6][7][8][9][10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Post-implantation annealing of SiC studied by slow-positron spectroscopies

Bräuer

Anwand

Coleman

et al. 1998

J. Phys.: Condens. Matter

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The effects of post-implantation annealing of damage in 6H-SiC caused by ion implantation at two different fluences have been studied by monoenergetic positron Doppler broadening and lifetime techniques. The measurements are supported by new calculations of positron lifetimes in vacancy clusters in SiC. At both fluences two defected layers are identified and characterized by depth and defect type as a function of annealing temperature. The results indicate that it is impossible to remove the radiation damage by annealing at temperatures up to .

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“…The SiC-samples were divided into two classes: (1) those previously exposed to high-energy electrons, and (b) those doped during the growth process or by B-diffusion at T a = 1900°C. Electron irradiation was effected by means of a linear accelerator at T = 50°C (Girka et al 1989) with a dose of 10 18 cm -2 and an electron beam energy of approximately 4 MeV.…”

Section: Original Papersmentioning

confidence: 99%

Study of luminescent centers annealing in wide bandgap semiconductors: Color cathodoluminescence‐scanning electron microscopy

et al. 1998

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Summary:A color cathodoluminescence-scanning electron microscopy (CCL-SEM) technique was used to study the annealing of luminescent centers in wide bandgap semiconductors (mainly silicon carbide), due to native defects, induced during the growth process or to radiation by highenergy particles. The significant role of dislocations in the crystals was revealed. These dislocations are created by the mechanical failure of crystals and play the role of getters for unstable defects and assist in quenching the luminescence at fairly low annealing temperatures. During the electron beam annealing of the samples, the resolved CL fine structure of luminescence images was measured around failure regions which look like a rosette of strength* at temperatures of 1300-1350 o C.

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Positron Diagnostics of Radiation Defects in Silicon Carbide

Cited by 8 publications

References 3 publications

N⁺ion-implantation-induced defects in ZnO studied with a slow positron beam

N⁺ion-implantation-induced defects in ZnO studied with a slow positron beam

Post-implantation annealing of SiC studied by slow-positron spectroscopies

Study of luminescent centers annealing in wide bandgap semiconductors: Color cathodoluminescence‐scanning electron microscopy

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Positron Diagnostics of Radiation Defects in Silicon Carbide

Cited by 8 publications

References 3 publications

N+ion-implantation-induced defects in ZnO studied with a slow positron beam

N+ion-implantation-induced defects in ZnO studied with a slow positron beam

Post-implantation annealing of SiC studied by slow-positron spectroscopies

Study of luminescent centers annealing in wide bandgap semiconductors: Color cathodoluminescence‐scanning electron microscopy

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Product

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N⁺ion-implantation-induced defects in ZnO studied with a slow positron beam

N⁺ion-implantation-induced defects in ZnO studied with a slow positron beam