Positron and X-ray diffraction study of Cu–Se, In–Se and CuInSe2 thin films

Nancheva, N.; Docheva, P.; Djourelov, N.; Balcheva, M.

doi:10.1016/s0167-577x(01)00557-2

Cited by 11 publications

(4 citation statements)

References 17 publications

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“…All previous PAS studies conducted in CIS-based samples [34][35][36][37] allow for the existence of divacancies or even trivacancies consisting of V Cu and V Se , in line with our theoretical predictions. The specific assignments made for the observations rely, however, to a great extent on previous computational studies.…”

Section: Comparison With Experimentssupporting

confidence: 90%

“…The specific assignments made for the observations rely, however, to a great extent on previous computational studies. For instance, monovacancies and small vacancy clusters were detected in [34] and were interpreted as V Cu , V In , and their complexes-at the time, V Se was thought to be positively charged and, thus, out of reach of positrons. Another PAS study [35] reported a concentration of less than 5•10 15 cm −3 for neutral and negatively charged monovacancies, while describing a concentration at least one order of magnitude greater (2 • 10 16 cm −3 ) for divacancies in non-irradiated samples, ruling for the existence of vacancies as primarily part of vacancy clusters.…”

Section: Comparison With Experimentsmentioning

confidence: 99%

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Formation, migration, and clustering of point defects in CuInSe₂from first principles

Oikkonen

Ganchenkova

Seitsonen

et al. 2014

J. Phys.: Condens. Matter

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The electronic properties of high-efficiency CuInSe(2) (CIS)-based solar cells are affected by the microstructural features of the absorber layer, such as point defect types and their distribution. Recently, there has been controversy over whether some of the typical point defects in CIS--V(Cu), V(Se), In(Cu), Cu(In)--can form stable complexes in the material. In this work, we demonstrate that the presence of defect complexes during device operational time can be justified by taking into account the thermodynamic and kinetic driving forces acting behind defect microstructure formation. Our conclusions are backed up by thorough state-of-the-art calculations of defect interaction potentials as well as the activation barriers surrounding the complexes. Defect complexes such as In(Cu)-2V(Cu), In(Cu)-Cu(In), and V(Se)-V(Cu) are shown to be stable against thermal dissociation at device operating temperatures, but can anneal out within tens of minutes at temperatures higher than 150-200 °C (V(Cu)-related complexes) or 400 °C (antisite pair). Our results suggest that the presence of these complexes can be controlled via growth temperatures, which provides a mechanism for tuning the electronic activity of defects and the device altogether.

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Section: Comparison With Experimentssupporting

confidence: 90%

Section: Comparison With Experimentsmentioning

confidence: 99%

Formation, migration, and clustering of point defects in CuInSe₂from first principles

Oikkonen

Ganchenkova

Seitsonen

et al. 2014

J. Phys.: Condens. Matter

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“…Copper indium diselenide (CIS) thin film solar cells are one of the most promising photovoltaic devices for large area terrestrial applications. Several researches demonstrated greater than 18% efficiency using alternative lower cost methods [1]. The high absorption coefficient of CIS material (10 5 cm -1 ) makes thin-film solar cells practical, even though the rather low optical band gap of 1.05 eV is low for optimum conversion efficiency [2].…”

Section: Introductionmentioning

confidence: 99%

Properties of Pulse Electrodeposited CuInSe₂ Films

Shanmugavel¹,

Srinivas²,

Murali³

2012

ECS Trans.

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Copper Indium Selenide films were deposited by the pulse plating technique at different bath temperatures in the range of 30°C -80°C and at 50 % duty cycle (15s ON and 15s OFF). X-ray diffraction studies indicated the formation of single phase chalcopyrite copper indium selenide films. X-ray photoelectron spectroscopic studies indicated core levels of Cu 2p, In 3d and Se 3d. Atomic force microscope studies indicated that the surface roughness and grain size increased with duty cycle. The band gap of the films was in the range of 0.9 to 1.0 eV. The refractive index (n) and extinction co-efficient (k). values were determined from the transmission data. The n and k values are in the ranges of 2.68-1.78 and 0.43-0.083, respectively.

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“…The homo-and heterojunctions have electrical properties that are suitable for photovoltaic devices. During the last decade, the efficiency of solar cells based on optimized CIS thin films has been reached up to 18% [8]. Many methods, such as RF-sputtering [9,10], magnetron sputtering [11], single-source [12][13][14], multi-source vacuum evaporation [15], flash evaporation [10,16,17], quasi-flash evaporation [18], molecular beam epitaxy (MBE) [19], chemical spray [20], and electrodeposition [21,22] have been explored to prepare polycrystalline CIS films.…”

Section: Introductionmentioning

confidence: 99%

Preparation and characterization of copper indium selenide powders and films

2008

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A simple, less-hazardous and low cost co-deposition method for preparing Cu 12.32 In 18.04 Se 32 nanopowders was explored using CuCl 2 ·2H 2 O, InCl 3 and Se as the starting materials, and sodium borohydride (NaBH 4 ) as the reductant in deionized water. Cu 12.32 In 18.04 Se 32 films were prepared by pulling the indium tin oxide (ITO) coated glass substrates from Cu 12.32 In 18.04 Se 32 suspension. The suspension was prepared by dispersing the Cu 12.32 In 18.04 Se 32 nanopowders in the solution of dodecyl benzene sulphonate acid sodium salt. Morphology and structure of Cu 12.32 In 18.04 Se 32 nanopowders and films were examined by X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM), respectively. The photoabsorption property was tested by UV-visible spectrometry. And the photoluminescence (PL) spectra were measured by fluorescence spectrophotometer.

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Positron and X-ray diffraction study of Cu–Se, In–Se and CuInSe2 thin films

Cited by 11 publications

References 17 publications

Formation, migration, and clustering of point defects in CuInSe₂from first principles

Formation, migration, and clustering of point defects in CuInSe₂from first principles

Properties of Pulse Electrodeposited CuInSe₂ Films

Preparation and characterization of copper indium selenide powders and films

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Positron and X-ray diffraction study of Cu–Se, In–Se and CuInSe2 thin films

Cited by 11 publications

References 17 publications

Formation, migration, and clustering of point defects in CuInSe2from first principles

Formation, migration, and clustering of point defects in CuInSe2from first principles

Properties of Pulse Electrodeposited CuInSe2 Films

Preparation and characterization of copper indium selenide powders and films

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Product

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Formation, migration, and clustering of point defects in CuInSe₂from first principles

Formation, migration, and clustering of point defects in CuInSe₂from first principles

Properties of Pulse Electrodeposited CuInSe₂ Films