2017
DOI: 10.1002/app.45871
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Positive‐tone photoresist consisting of a multifunctional acrylate resin that can be patterned after photo‐crosslinking

Abstract: A multifunctional acrylate resin having a tertiary ester structure is synthesized using a thiol‐acrylate Michael addition click reaction. By loading both a photo radical initiator and a photo acid generator into this resin, a positive‐tone photoresist, that can be patterned after photocrosslinking (PPaP), is formulated. After the thin film is irradiated with 365 nm light, radical crosslinking proceeds and a solvent resistant “frozen” film can be obtained. The frozen film works as a positive‐tone photoresist. W… Show more

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Cited by 6 publications
(2 citation statements)
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“…57 More recently, photoacid generators and photo radical initiators have been used for on-demand debonding of multifunctional acrylates, with acid-sensitive cross-linkers (esters, hemiacetals, carboxylates, etc. ), [58][59][60][61][62] and vinyl block copolymers including acid-reactive segments. [63][64][65][66][67][68][69][70] The latter utilises polymers such as poly (iso-butoxy-ethyl acrylate) or poly (isobornyl ester) where photoacid cleavage of the side chain occurs, forming acrylic acid moieties.…”
Section: Photodegradation Using Additivesmentioning
confidence: 99%
“…57 More recently, photoacid generators and photo radical initiators have been used for on-demand debonding of multifunctional acrylates, with acid-sensitive cross-linkers (esters, hemiacetals, carboxylates, etc. ), [58][59][60][61][62] and vinyl block copolymers including acid-reactive segments. [63][64][65][66][67][68][69][70] The latter utilises polymers such as poly (iso-butoxy-ethyl acrylate) or poly (isobornyl ester) where photoacid cleavage of the side chain occurs, forming acrylic acid moieties.…”
Section: Photodegradation Using Additivesmentioning
confidence: 99%
“…(ii) Acid oxidation approach [24]. Burkman D. C. presents that residue can be removed by Piranha solution (H 2 SO 4 /H 2 O 2 ) at relatively high temperatures (>100°C) [25]. However, as dealing with some metal wafer, limitation occurs.…”
mentioning
confidence: 99%