Positive Tone Nanoparticle Photoresists: New Insight on the Patterning Mechanism

Yu, Mufei; Xu, Hong; Kosma, Vasiliki; Odent, Jérémy; Kasahara, Kazuki; Giannelis, Emmanuel P.; Ober, Christopher K.

doi:10.2494/photopolymer.29.509

Cited by 8 publications

(7 citation statements)

References 14 publications

(13 reference statements)

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“…The authors demonstrated that by using Hg–Xe lamp lithography, microscale (100 µm line width) TiO 2 and ITO patterns could be obtained (Figure c). Ober and co‐workers at Cornell investigated the dual‐tone behavior of MO nanoparticle resists and showed the feasibility of using the Zr methacrylate (ZrMAA) nanoparticle resist as a positive tone resist . By changing the developer to TMAH and adding an additional postexposure baking (PEB) step, positive tone resist behavior was observed in the MO precursors.…”

Section: Mo Patterns Made By Solution Direct‐patterning Techniquesmentioning

confidence: 99%

Solution‐Based Micro‐ and Nanoscale Metal Oxide Structures Formed by Direct Patterning for Electro‐Optical Applications

2018

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Due to their transparency and tunable electrical, optical, and magnetic properties, metal oxide thin films and structures have many applications in electro-optical devices. In recent years, solution processing combined with direct-patterning techniques such as micro-/nanomolding, inkjet printing, e-jet printing, e-beam writing, and photopatterning has drawn much attention because of the inexpensive and simple fabrication process that avoids using capital-intensive vacuum deposition systems and chemical etching. Furthermore, practical applications of solution direct-patterning techniques with metal oxide structures are demonstrated in thin-film transistors and biochemical sensors on a wide range of substrates. Since direct-patterning techniques enable low-cost fabrication of nanoscale metal oxide structures, these methods are expected to accelerate the development of nanoscale devices and systems based on metal oxide components in important application fields such as flexible electronics, the Internet of Things (IoT), and human health monitoring. Here, a review of the fabrication procedures, advantages, limitations, and applications of the main direct-patterning methods for making metal oxide structures is presented. The goal is to highlight the examples with the most promising perspective from the recent literature.

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Section: Mo Patterns Made By Solution Direct‐patterning Techniquesmentioning

confidence: 99%

Solution‐Based Micro‐ and Nanoscale Metal Oxide Structures Formed by Direct Patterning for Electro‐Optical Applications

2018

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“…However, these films still contain ∼40% carbon following exposure to a dose that results in the solubility transition. Previous studies have suggested that the excess carbon is removed from organotin photoresists due to the thermal energy provided during the PEB . Because the PEB is typically performed under atmospheric conditions, the O 2 and/or H 2 O present in air could assist in desorption of the organic ligands or the formation of Sn–O–Sn network bonds.…”

Section: Resultsmentioning

confidence: 99%

Effect of Ambient Conditions on Radiation-Induced Chemistries of a Nanocluster Organotin Photoresist for Next-Generation EUV Nanolithography

Diulus

Frederick

Hutchison

et al. 2020

ACS Appl. Nano Mater.

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Solution-based organometallic nanoclusters are unique nanoscale precursors due to the ability to precisely control their size, shape, structure, and assembly. The interaction of extreme ultraviolet (EUV) or X-ray photons with these organometallic nanoclusters can result in processes that can lead to a change in solubility. This makes these materials prime candidates for nextgeneration photoresists for EUV nanolithography. In this study, we investigate the interaction of X-ray radiation with a charge neutral, sodium templated, butyl-tin Keggin (β-NaSn 13 ) nanocluster. This nanocluster is used as a model EUV photoresist to better understand the radiation induced solubility transition. Ambient pressure X-ray photoelectron spectroscopy (AP-XPS) was used to characterize the β-NaSn 13 thin films, where Sn 3d, O 1s, and C 1s core levels were measured under a range of ambient conditions, including ultrahigh vacuum and 1 mbar of oxygen, water, methanol, or nitrogen. A photon dose array was obtained for each ambient condition to determine their effect on the photon induced chemistries which result in the solubility transition. The resulting contrast curves indicate that an oxygen ambient significantly reduces the required photon dose for the solubility transition relative to UHV, while all other ambients increase the required photon dose for the solubility transition relative to UHV. We performed in situ XPS after postexposure annealing β-NaSn 13 thin films in multiple ambients to study the chemistry that occurs after a postexposure bake (PEB). The β-NaSn 13 thin films retained a significant amount of aliphatic carbon following the PEB in all the ambients we studied. On the basis of our studies, we propose that the solubility transition for β-NaSn 13 thin films occurs through radical hydrogen abstraction and radical−radical coupling reactions. These studies further improve the understanding of photon induced chemistries in a β-NaSn 13 model resist and provide mechanistic insights for EUV lithography processing with organometallic nanomaterials.

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“…An alkali-soluble type PISC2 can be patterned by alkali-developer after UV exposure and baking in the same manner as positive tone photoresists [15][16][17]. Figure 7 shows SEM images of patterns of PISC-X007 with various film thicknesses, resolutions and shapes.…”

Section: Formation Of Repellent Template Patternsmentioning

confidence: 99%

High Resolution Patterning of Functional Inks using Wettability and Repellency Control Method and Its Application to Electronic Devices

Hamaguchi¹,

Wada²,

Yasuda³

et al. 2020

J. Photopol. Sci. Technol.

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High performance and easily processable wettable/repellent patterns formation were achieved using photo-induced surface control materials (PISC) by conventional i-line exposure and annealing. Functional inks can be patterned spontaneously on exposed surface which realize high resolution patterning by drop-coating methods. Fine silver lines of 10-m width were achieved by inkjet printing with Ag nanoparticle (AgNP) inks on this pattern. Using this technique, silver source-drain electrodes of organic thin film transistor (OTFT) were successfully fabricated. A novel patterning method using alkali-developable type PISC was also devised for formation of high resolution, aspect patterns and high thickness microlenses, which difficult to be formed by photolithography technique.

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Positive Tone Nanoparticle Photoresists: New Insight on the Patterning Mechanism

Cited by 8 publications

References 14 publications

Solution‐Based Micro‐ and Nanoscale Metal Oxide Structures Formed by Direct Patterning for Electro‐Optical Applications

Solution‐Based Micro‐ and Nanoscale Metal Oxide Structures Formed by Direct Patterning for Electro‐Optical Applications

Effect of Ambient Conditions on Radiation-Induced Chemistries of a Nanocluster Organotin Photoresist for Next-Generation EUV Nanolithography

High Resolution Patterning of Functional Inks using Wettability and Repellency Control Method and Its Application to Electronic Devices

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