Positive pion production by 149-166 MeV protons onO16andSi

Abstract

Angular distributions of the differential cross sections for the reactions ' O(p, m+)'70(g. s. , 0.87 MeV) and Si(p, m+)2 Si(g.s., 1.27, 2.03, 3.07, 3.62 MeV) have been measured at several bombarding energies corresponding to pion center-of-mass energies from 7.2 to 21 MeV. In addition, cross section upper limits were obtained at several angles for transitions to the 2.43 and 4.08 MeV states of Si at T~=149 MeV. The systematics of the data are discussed and compared with distorted-wave Born approximation stripping model calculations.NUCLEAR REACTIONS ' 0, Si(p,~+ ), E~= 149 -166 MeV; measured do. /dQ(8), 8=25 -155'; comparison with DWBA stripping ! model calculations.