Positive-ion bombardment of substrates in rf diode glow discharge sputtering

Coburn, J. W.; Kay, E.

doi:10.1063/1.1661054

Cited by 424 publications

(175 citation statements)

References 33 publications

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“…With the plausible assumption that the plasma potential becomes larger when the dc bias voltage increases, 17 this model also successfully predicts that the maximum SHG signal should shift to larger thicknesses at large bias voltage, as experimentally observed ͑Fig. 5͒.…”

Section: Dependence Of the Oxide Trap Density On Oxide Thicknesssupporting

confidence: 68%

Nonlinear optical diagnosis of oxide traps formed during reactive ion etching

Fang

Heidbrink

2000

Journal of Applied Physics

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Oxide traps generated by reactive ion etching are studied using a pulsed femtosecond laser. The second harmonic generation ͑SHG͒ signal from the Si/SiO 2 interface is sensitive to charged traps in the oxide. The time evolution of the SHG signal indicates that positive traps predominate. The angular dependence of the polarized signal shows that the electric field generated by the oxide traps alters the symmetry of the sample. The damage is greatest for an oxide thickness of 13 nm ͑for a plasma dc bias of 300 V͒. Thicker oxides have smaller SHG signals, presumably because the Fowler-Nordheim tunneling currents induced by plasma charging of the oxide surface are smaller. Very thin oxides also exhibit reduced damage. The time dependent SHG signals depend on the temperature of the samples; these data provide information on the trapping and detrapping of substrate electrons by oxide holes.

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Section: Dependence Of the Oxide Trap Density On Oxide Thicknesssupporting

confidence: 68%

Nonlinear optical diagnosis of oxide traps formed during reactive ion etching

Fang

Heidbrink

2000

Journal of Applied Physics

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“…However, the discharge is not perfectly symmetric, since the side confinement of the plasma by the glass cylinder effectively enhances the grounded surface area. This leads to a certain geometrical asymmetry, depending on the discharge conditions [58].…”

Section: Methodsmentioning

confidence: 99%

Control of plasma properties in capacitively coupled oxygen discharges via the electrical asymmetry effect

Schüngel¹,

Zhang²,

Iwashita³

et al. 2011

J. Phys. D: Appl. Phys.

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To cite this version:E Schüngel, Q-Z Zhang, S Iwashita, J Schulze, L-J Hou, et al.. Control of plasma properties in capacitively coupled oxygen discharges via the electrical asymmetry effect. Journal of Physics D: Applied Physics, IOP Publishing, 2011, 44 (28) Abstract. By using a combined experimental, numerical and analytical approach, we investigate the control of plasma properties via the Electrical Asymmetry Effect (EAE) in a capacitively coupled oxygen discharge. In particular, we present the first experimental investigation of the EAE in electronegative discharges. A dual-frequency voltage source of 13.56 MHz and 27.12 MHz is applied to the powered electrode and the discharge symmetry is controlled by adjusting the phase angle θ between the two harmonics. It is found that the bulk position and density profiles of positive ions, negative ions, and electrons have a clear dependence on θ, while the peak densities and the electronegativity stay rather constant, largely due to the fact that the time averaged power absorption by electrons is almost independent of θ. This indicates that the ion flux towards the powered electrode remains almost constant. Meanwhile, the dc self-bias and, consequently, the sheath widths and potential profile can be effectively tuned by varying θ. This enables a flexible control of the ion bombarding energy at the electrode. Therefore, our work proves the effectiveness of the EAE to realize separate control of ion flux and ion energy in electronegative discharges. At low pressure, the strength of resonance oscillations, which are found in the current of asymmetric discharges, can be controlled with θ.

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“…The low pressure environment is needed to increase the mean free path of the sampled species and helps to prevent any changes in their charge state and chemical composition. Gridded energy analyzers, 22 curved electrostatic plates, and quadrupole mass analyzers, singly or in combination have been used to measure the acceleration of ions through a variable frequency rf generated sheath, 23 the angular direction of the ions, 24 and the mass distribution of the impinging ions 25 and neutrals.…”

Section: A Ion Mass and Energy Analyzersmentioning

confidence: 99%

Diagnostics for plasma processing (etching plasmas) (invited)

Hershkowitz

Breun

1997

Review of Scientific Instruments

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Plasma processing diagnostics play two different roles—characterization and control. The goal of plasma characterization is to establish connections of data with external parameters and to verify models. The goal of control diagnostics is to make noninvasive in situ measurements of relevant processing parameters. Diagnostics used in semiconductor etching are considered. These include Langmuir probes, laser induced fluorescence, optical emission spectroscopy, infrared and Fourier transform infrared absorption spectroscopy, mass spectrometry, microwave interferometry, and radio frequency diagnostics. An example is given of the use of many diagnostics in characterizing SiO2 and Si etching by fluorocarbons.

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Positive-ion bombardment of substrates in rf diode glow discharge sputtering

Cited by 424 publications

References 33 publications

Nonlinear optical diagnosis of oxide traps formed during reactive ion etching

Nonlinear optical diagnosis of oxide traps formed during reactive ion etching

Control of plasma properties in capacitively coupled oxygen discharges via the electrical asymmetry effect

Diagnostics for plasma processing (etching plasmas) (invited)

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