Positive-Bias-Temperature-Instability Induced Random-Trap-Fluctuation Enhanced Physical Unclonable Functions on 14-nm nFinFETs

Hsieh, E. R.; Wang, Z. Y.; Ye, Y. H.; Wu, Yizhang; Huang, Chi‐Feng; Huang, Po-Hua; Huang, Yirong; Miu, M. L.; Su, Hai‐Jun; Huang, Sy‐Ruen; Lu, S. M.

doi:10.1109/led.2022.3188492

Cited by 2 publications

(2 citation statements)

References 18 publications

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“…In practical circuit operations, devices experience various reliability issues, triggering non-ideal effects such as circuit functional aging and failure. As shown in Figure 1 , taking a typical inverter circuit as an example, devices undergo three typical biasing conditions: gate voltage (V gs ) > 0 V, drain voltage (V ds ) = 0 V; |V gs | > 0 V, |V ds | > 0 V and V gs = 0 V, |V ds | > 0 V. The degradation phenomena observed in NMOS or PMOS devices under the bias condition of |V gs | > 0 V, V ds = 0 V are, respectively, termed positive bias temperature instability (PBTI) [ 24 , 25 , 26 ] and negative bias temperature instability (NBTI) [ 27 , 28 , 29 , 30 , 31 , 32 , 33 ]. The degradation phenomenon observed when the device is under the bias condition of |V gs | > 0 V, |V ds | > 0 V is referred to as hot carrier degradation (HCD) [ 34 , 35 , 36 , 37 , 38 , 39 , 40 , 41 ].…”

Section: Introductionmentioning

confidence: 99%

The Understanding and Compact Modeling of Reliability in Modern Metal–Oxide–Semiconductor Field-Effect Transistors: From Single-Mode to Mixed-Mode Mechanisms

Sun,

Chen,

Zhang

et al. 2024

Micromachines

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With the technological scaling of metal–oxide–semiconductor field-effect transistors (MOSFETs) and the scarcity of circuit design margins, the characteristics of device reliability have garnered widespread attention. Traditional single-mode reliability mechanisms and modeling are less sufficient to meet the demands of resilient circuit designs. Mixed-mode reliability mechanisms and modeling have become a focal point of future designs for reliability. This paper reviews the mechanisms and compact aging models of mixed-mode reliability. The mechanism and modeling method of mixed-mode reliability are discussed, including hot carrier degradation (HCD) with self-heating effect, mixed-mode aging of HCD and Bias Temperature Instability (BTI), off-state degradation (OSD), on-state time-dependent dielectric breakdown (TDDB), and metal electromigration (EM). The impact of alternating HCD-BTI stress conditions is also discussed. The results indicate that single-mode reliability analysis is insufficient for predicting the lifetime of advanced technology and circuits and provides guidance for future mixed-mode reliability analysis and modeling.

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Section: Introductionmentioning

confidence: 99%

The Understanding and Compact Modeling of Reliability in Modern Metal–Oxide–Semiconductor Field-Effect Transistors: From Single-Mode to Mixed-Mode Mechanisms

Sun,

Chen,

Zhang

et al. 2024

Micromachines

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“…True Random Number Generators (TRNGs) obtained from the first time-to-BD [14] and from current fluctuations registered after a soft-BD event [15] were also investigated for that purpose. Additionally, Physically Unclonable Functions (PUFs) [16][17][18][19] based on soft-BD currents [20] and on the breakdown spot location along the channel in MOS transistors [21] have been proposed. It is worth emphasizing that all the above referred works rely on the measurement of some aspect of the electrical characteristics of the devices, so that in these cases additional circuitry is imperatively required for detection.…”

Section: Introductionmentioning

confidence: 99%

Oxide Breakdown Spot Spatial Patterns as Fingerprints for Optical Physical Unclonable Functions

Porti

Redón

Muñoz

et al. 2023

IEEE Electron Device Lett.

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Dielectric Breakdown (BD) of the gate oxide in a Metal-Insulator-Semiconductor (MIS) or Metal-Insulator-Metal (MIM) structure has been traditionally considered a major drawback since such event can seriously affect the electrical performance of the circuit containing the device. However, since BD is an inherently random process, when externally detectable by optical means, the phenomenon can be used to generate cryptographic keys for Physically Unclonable Functions (PUFs). This is the case discussed here. Images containing BD spot spatial distributions in MIM devices were binarized and their uniformity, uniqueness and reproducibility evaluated as fingerprints for security applications such as anti-counterfeiting purposes, secure identification and authentication of components. The obtained results are highly promising since it is demonstrated that the generated fingerprints meet all the mandatory requirements for PUFs, indicating that the proposed approach is potentially useful for this kind of applications.

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Positive-Bias-Temperature-Instability Induced Random-Trap-Fluctuation Enhanced Physical Unclonable Functions on 14-nm nFinFETs

Cited by 2 publications

References 18 publications

The Understanding and Compact Modeling of Reliability in Modern Metal–Oxide–Semiconductor Field-Effect Transistors: From Single-Mode to Mixed-Mode Mechanisms

The Understanding and Compact Modeling of Reliability in Modern Metal–Oxide–Semiconductor Field-Effect Transistors: From Single-Mode to Mixed-Mode Mechanisms

Oxide Breakdown Spot Spatial Patterns as Fingerprints for Optical Physical Unclonable Functions

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