2010
DOI: 10.1155/2010/575472
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Positioning of the Fermi Level in Graphene Devices with Asymmetric Metal Electrodes

Abstract: To elucidate the effect of the work function on the position of the Dirac point, we fabricated graphene devices with asymmetric metal contacts. By measuring the peak position of the resistance for each pair of metal electrodes, we obtained the voltage of the Dirac pointVgDirac(V) from the gate response. We found that the position ofVgDirac(V) in the hybrid devices was significantly influenced by the type of metal electrode. The measured shifts inVgDirac(V) were closely related to the modified work functions of… Show more

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Cited by 7 publications
(3 citation statements)
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“…Methods section). For Ti, experimentally we determined a potential height of −0.12 eV±0.01 eV which provides still a reasonable match to the −0.23 to −0.28 eV stated in literature 27 28 29 . We conclude that the gate-dependence can qualitatively be related to the energy dependence of Klein tunnelling which provides another decisive and independent check for the claim that the transverse voltage indicates cascaded Mie scattering.…”
Section: Resultssupporting
confidence: 84%
See 1 more Smart Citation
“…Methods section). For Ti, experimentally we determined a potential height of −0.12 eV±0.01 eV which provides still a reasonable match to the −0.23 to −0.28 eV stated in literature 27 28 29 . We conclude that the gate-dependence can qualitatively be related to the energy dependence of Klein tunnelling which provides another decisive and independent check for the claim that the transverse voltage indicates cascaded Mie scattering.…”
Section: Resultssupporting
confidence: 84%
“…For Pd the analysis of the data in Fig. 2b results in a potential height of +0.06 eV±0.01 eV which matches very well with the +0.08 to +0.09 eV reported 27 28 with no free parameter ( cf . Methods section).…”
Section: Resultssupporting
confidence: 76%
“…The possibility of applying a gate voltage to graphene and other 2D materials is perhaps the most important property of these materials. According to we have detailed in this section, it is possible to change the charge density in graphene by a gate voltage, so that a change occurs in its Fermi level [123,124] and consequently in its work function and conductivity. So, managing graphene's work function has many benefits that are not possible to achieve using conventional 3D materials.…”
Section: Fermi Level Control Via Gate Voltagementioning
confidence: 99%