Position dependent growth rate and composition of low pressure organometallic vapour phase epitaxy grown InGaP and AlGaAs on GaAs inverted mesa grooves

Anders, M.J.; Bongers, M.M.G.; Bastos, P.L.; Giling, L.J.

doi:10.1016/0022-0248(95)00208-1

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Cited by 15 publications

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“…This effect is especially apparent for the 60 case. This phenomenon can be explained considering the diffusion of growth species from the gas phase towards the susceptor [23,24]. At the susceptor the concentration of GaCl is zero, because it immediately reacts to form solid GaN as soon as it reaches the surface.…”

Section: Resultsmentioning

confidence: 99%

The effect of HVPE reactor geometry on GaN growth rate—experiments versus simulations

Dam

Grzegorczyk

Hageman

et al. 2004

Journal of Crystal Growth

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Section: Resultsmentioning

confidence: 99%

The effect of HVPE reactor geometry on GaN growth rate—experiments versus simulations

Dam

Grzegorczyk

Hageman

et al. 2004

Journal of Crystal Growth

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4.4 Quantum-wire structures

Klingshirn¹

Landolt-Börnstein - Group III Condensed Matter

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A rather commonly used possibility is to grow a single or multiple quantum well and to create a wire by nanolithography and dry or wet etching ( Fig. 4.84a). To protect the side walls of the well, one uses sometimes overgrowth with the barrier material. Examples are found in [88F1, 88G1, 88K1, 91G2, 92G1, 93C1, 94I1, 94I2, 94K4, 95S4] and for the creation of nano-pillars in [99K2].An alternative method is to intermix the well and the barrier material by ion-beam bombardment or laser beam-induced thermal interdiffusion except for the region of the wire and to anneal the samples subsequently to cure the defects. In this case the lateral confining potential is smooth and not step-like as in Fig. 4.84a and generally also lower. Examples are found in [86C1, 88F1, 91C3, 91Y1, 92B2, 92S2, 93C1, 93P1, 95D1, 95D2]. Ref. p. 276] 4.4 Quantum-wire structures 265 Landolt-Börnstein New Series III/34C1 Landolt-Börnstein New Series III/34C1 GaAs (and Al 1− − − −y Ga y As) wiresAccording to the general outline of this chapter on III-V compounds, we start again in 4.4.2.1 with the optical properties in the low-and intermediate-density regimes of excitons, biexcitons or trions including intersubband transition and continue in 4.4.2.2 with the high-density regime and with plasma effects.

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4.4.5 References for 4.4

Klingshirn¹

Landolt-Börnstein - Group III Condensed Matter

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Position dependent growth rate and composition of low pressure organometallic vapour phase epitaxy grown InGaP and AlGaAs on GaAs inverted mesa grooves

Cited by 15 publications

References 18 publications

The effect of HVPE reactor geometry on GaN growth rate—experiments versus simulations

The effect of HVPE reactor geometry on GaN growth rate—experiments versus simulations

4.4 Quantum-wire structures

4.4.5 References for 4.4

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