Porous Silicon in a Semiconductor Manufacturing Environment

Porous Silicon Characterization and Application: General View

“…A similar approach to designing a chamber for electrochemical etching aimed for application in industrial production was also used in Bosch GmbH (Boehringer et al 2012). At that, it was shown that PSi application in industrial production requires better controllability and reproducibility of critical PSi properties.…”

“…In particular, the tool has to be capable of processing hundreds of wafers without a failure demanding assistance or repair. It was concluded that for achievement of such parameters it is necessary to use special configuration of the electrochemical cell, specific materials for the electrodes or seals, fully automated "cassetteto-cassette" processing, continuous circulation of the electrolyte, PC-controlled programmable current source, special control of the HF concentration, and so on (Boehringer et al 2012).…”

Methods to Evaluate Spatial Uniformity in Porous Silicon

“…Ohmic contacts can be obtained by p + doping of the back side of the wafer (Loni et al 2015), by Al plating the back side and annealing (Escorcia-Garcia et al 2009) or by contacting n-type silicon with a Ga-In eutectic (Antunez et al 2014). Foll et al provide a good discussion of all the considerations required for homogeneous etching of both p-type and n-type silicon (Föll et al 2002), while considerations required for uniform etching of 150 mm silicon wafers in an industrial setting have also been reported (Boehringer et al 2012;Gautier et al 2015). Alternative approaches to attain lateral uniformity have been to simultaneously etch both sides of the silicon (James et al 2007) or to use neutron-transmutation-doped silicon, the latter avoiding striations (Schweizer et al 2010).…”

All-optical modulation in Mid-Wavelength Infrared using porous Si membranes

“…We suggest that the unique spectral properties of pSi, in combination with relatively low production costs and compatibility with well-established semiconductor devices manufacturing technologies, make it a good candidate for the development of electro-optical components for the IR technology. Moreover, pSi fabrication via anodisation has been demonstrated to be a scalable semiconductor cleanroom-compatible manufacturing process that is also amenable to on-chip integration of membranes 21 22 23 24 .…”