Porous Silicon Gas Sensors: The Role of the Layer Thickness and the Silicon Conductivity

Ramírez-González, Francisco; Garcı́a-Salgado, G.; Rosendo, E.; Díaz, T.; Nieto-Caballero, F.G.; Coyopol, A.; Romano, Renan Arnon; Luna, Adan; Monfil, K.; Gastellóu, Erick

doi:10.3390/s20174942

Cited by 13 publications

(9 citation statements)

References 26 publications

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“…The properties have consequently been determined by the finally achieved pore sizes and depths. The application areas are very wide, and include sensors, catalysts, solar cells, and charge storages [8][9][10][11][12][13][14][15][16][17]. For sensors, Ramírez-González et al controlled the thickness of the PS layer and tested ethanol-sensing performance by measuring conductivity.…”

Section: Introductionmentioning

confidence: 99%

“…For sensors, Ramírez-González et al controlled the thickness of the PS layer and tested ethanol-sensing performance by measuring conductivity. They showed that the thickness is an important factor for a target-sensing gas [14]. Dwivedi et al prepared TiO 2 nanotube-decorated PS, and showed that the heterojunction exhibited a selective ethanol-sensing performance (with sub-ppm level down to 0.5 ppm) and a good linear response at low detection level [15].…”

Section: Introductionmentioning

confidence: 99%

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Enhanced Photoluminescence of Electrodeposited Europium Complex on Bare and Terpyridine-Functionalized Porous Si Surfaces

et al. 2021

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The trivalent Eu(III) ion exhibits unique red luminescence and plays an significant role in the display industry. Herein, the amperometry electrodeposition method was employed to electrodeposit Eu(III) materials on porous Si and terpyridine-functionalized Si surfaces. The electrodeposited materials were fully characterized by scanning electron microscopy, X-ray diffraction crystallography, Fourier-transform infrared spectroscopy, and X-ray photoelectron spectroscopy. Photoluminescence (PL) spectroscopy revealed that PL signals were substantially increased upon deposition on porous Si surfaces. PL signals were mainly due to direct excitation and charge-transfer-indirect excitations before and after thermal annealing, respectively. The as-electrodeposited materials were of a Eu(III) complex consisting of OH, H2O, NO3−, and CO32− groups. The complex was transformed to Eu2O3 upon thermal annealing at 700 °C. The electrodeposition on porous surfaces provide invaluable information on the fabrication of thin films for displays, as well as photoelectrodes for catalyst applications.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Enhanced Photoluminescence of Electrodeposited Europium Complex on Bare and Terpyridine-Functionalized Porous Si Surfaces

et al. 2021

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“…The amount of porosity of the samples prepared in this way depends on several parameters, the most important of which are the concentration of the solution, the current density, the etching time, and the intensity of the laser beam applied to the sample [11][12][13]. The influence of laser beam intensity on the amount of porosity and pore diameter of the sample prepared from n-type silicon has been studied in this work, as has the latter's effect on the amount of sensitivity, which has been discussed with the usage of methanol gas [14,15]. When used as a sensor for environmental pollution with toxic gases, the PSi was prepared and studied to determine the effect of the preparation conditions on its properties [16,17].…”

Section: Theoretical Partmentioning

confidence: 99%

Fabrication of Porous Silicon as a Gas Sensor: The Role of Porous Silicon Surface Morphology

Abdullah¹,

Haider²,

Jabbaar³

2022

JASN

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Manufacture of an environmental polluting gas sensor with improved properties by controlling the preparation conditions of the photoelectrochemical etching technique (PECE). The amount of porosity, the diameter of the pores, and the thickness of the prepared layer of porous silicon (Psi) can be controlled by changing one or all of these conditions. In this paper, n-type Si with a crystalline orientation (100) was used, whereby PSi was prepared with the use of a red diode laser with a wavelength of 650 nm, using different radiation intensity, and with the constancy of etching time and current density. Through the results obtained, it was noted that: the porosity increases significantly up to 75% as well as the thickness of the PSi layer up to 1.45 µm with the increase in the intensity of the laser beam. Also, examining the morphology of the surface samples by field emission scanning electron microscope (FE-SEM) besides, the average pore diameters of the prepared samples were calculated. It is clear that the intensity of the laser beam used in the irradiation process is one of the important factors in determining the properties of the prepared PSi. PSi samples have been tested by FTIR to investigate chemical bonds on surfaces such as, (Si-Si, Si-H, Si-H2, Si-O-Si, Si-O-Si, Si-H, Si-O-Si). Samples tested as gas sensors and noticed that an increase in the sensing current to 5.3 µA has appeared with the increase of porosity value where methanol gas is used as background.

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“…Porous Si is a promising material for low-temperature gas-sensing applications [ 166 ]. Bang et al [ 167 ] developed heterojunctions based on porous Si and SnO 2 NWs for low-temperature (100 °C) H 2 S gas-sensing applications.…”

Section: Other Resistive-based Gas Sensors (Glass/silicon/mof-based Gas Sensors)mentioning

confidence: 99%

State-of-the-Art Research on Chemiresistive Gas Sensors in Korea: Emphasis on the Achievements of the Research Labs of Professors Hyoun Woo Kim and Sang Sub Kim

Navale

Mirzaei

Majhi

et al. 2021

Sensors

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This review presents the results of cutting-edge research on chemiresistive gas sensors in Korea with a focus on the research activities of the laboratories of Professors Sang Sub Kim and Hyoun Woo Kim. The advances in the synthesis techniques and various strategies to enhance the gas-sensing performances of metal-oxide-, sulfide-, and polymer-based nanomaterials are described. In particular, the gas-sensing characteristics of different types of sensors reported in recent years, including core–shell, self-heated, irradiated, flexible, Si-based, glass, and metal–organic framework sensors, have been reviewed. The most crucial achievements include the optimization of shell thickness in core–shell gas sensors, decrease in applied voltage in self-heated gas sensors to less than 5 V, optimization of irradiation dose to achieve the highest response to gases, and the design of selective and highly flexible gas sensors-based WS2 nanosheets. The underlying sensing mechanisms are discussed in detail. In summary, this review provides an overview of the chemiresistive gas-sensing research activities led by the corresponding authors of this manuscript.

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Porous Silicon Gas Sensors: The Role of the Layer Thickness and the Silicon Conductivity

Cited by 13 publications

References 26 publications

Enhanced Photoluminescence of Electrodeposited Europium Complex on Bare and Terpyridine-Functionalized Porous Si Surfaces

Enhanced Photoluminescence of Electrodeposited Europium Complex on Bare and Terpyridine-Functionalized Porous Si Surfaces

Fabrication of Porous Silicon as a Gas Sensor: The Role of Porous Silicon Surface Morphology

State-of-the-Art Research on Chemiresistive Gas Sensors in Korea: Emphasis on the Achievements of the Research Labs of Professors Hyoun Woo Kim and Sang Sub Kim

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