2021
DOI: 10.1021/acs.chemrev.1c00269
|View full text |Cite
|
Sign up to set email alerts
|

Porous Silicon Carbide (SiC): A Chance for Improving Catalysts or Just Another Active-Phase Carrier?

Abstract: There is an obvious gap between efforts dedicated to the control of chemicophysical and morphological properties of catalyst active phases and the attention paid to the search of new materials to be employed as functional carriers in the upgrading of heterogeneous catalysts. Economic constraints and common habits in preparing heterogeneous catalysts have narrowed the selection of active-phase carriers to a handful of materials: oxide-based ceramics (e.g. Al2O3, SiO2, TiO2, and aluminosilicates–zeolites) and ca… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

0
47
0

Year Published

2021
2021
2024
2024

Publication Types

Select...
7
1

Relationship

1
7

Authors

Journals

citations
Cited by 74 publications
(47 citation statements)
references
References 762 publications
0
47
0
Order By: Relevance
“…In crystallographic SiC, each Si/C atom is surrounded by four C/Si atoms, bonding into an sp 3 ‐hybridized tetrahedron. [ 105 ] The stacking sequences of C–Si double layers in polytypes influence their electric properties, such as the bandgaps of 2.37 eV for 3C‐SiC, 4.04 eV for 2H‐SiC, 3.28 eV for 4H‐SiC, and 3.05 eV for 6H‐SiC. Silicon carbide nanofibers are widely employed as high‐temperature EM wave absorbents by exploiting their 1D structure.…”
Section: Dimensional Design Of Em Wave Absorption Materialsmentioning
confidence: 99%
“…In crystallographic SiC, each Si/C atom is surrounded by four C/Si atoms, bonding into an sp 3 ‐hybridized tetrahedron. [ 105 ] The stacking sequences of C–Si double layers in polytypes influence their electric properties, such as the bandgaps of 2.37 eV for 3C‐SiC, 4.04 eV for 2H‐SiC, 3.28 eV for 4H‐SiC, and 3.05 eV for 6H‐SiC. Silicon carbide nanofibers are widely employed as high‐temperature EM wave absorbents by exploiting their 1D structure.…”
Section: Dimensional Design Of Em Wave Absorption Materialsmentioning
confidence: 99%
“…SiC is a semiconductor, non-oxide ceramic featured by good thermal conductivity but not suitable to convert electromagnetic energy into heat (not radiofrequency heatable). 22 To improve the hyperthermic efficiency of the catalytic system, Ni/SiC was sandwiched between two electrically conductive and IH-responsive (eddy or Foucault currents) graphite-felt disks. The comparative analysis of these catalytic materials under different heating configuration (JH vs. IH) and experimental conditions (reaction temperature, gas-hourly-space-velocity -GHSV) has provided a practical tool for mapping the temperature gap existing between the macroscopic value measured at the catalyst bed by the pyrometer and that (real) of the excited metal nano-objects (Ni NPs) directly engaged in the radiofrequency-heated catalytic process.…”
Section: Introductionmentioning
confidence: 99%
“…Detailed study of the properties of such films was done in [51] According to the Auger electron spectroscopy data, 5+0.5 at.% average deviation from the starting material stoichiometry towards elemental carbon enrichment was determined within the anodic films formed in HF-based electrolytes with ethanol in several concentrations. In addition, an elemental analysis performed with electron diffraction spectroscopy showed that the films were enriched with oxygen and fluorine at the level of (5-7) at.% and (7)(8)(9)(10)(11) at.%, respectively. It was found that the samples with an increased content of detectable chemical impurities had pronounced photosensitivity.…”
Section: Porous Sic Formationmentioning
confidence: 99%
“…Here we note that Lee Canham subsequently pioneered the biomedical applications of porous silicon as well [4]. To date, there have been several generalizing reviews on the recent results of obtaining porous structures based on semiconductor materials and compounds and the prospects for their application for modern micro-and nanoelectronics, sensing and biotechnologies [5][6][7][8][9][10][11].…”
Section: Introductionmentioning
confidence: 99%