Porous low k film with multilayer structure used for promoting adhesion to SiCN cap barrier layer

Zhou, Ming; Zhang, B.C.

doi:10.1016/j.microrel.2015.03.004

Cited by 4 publications

(2 citation statements)

References 18 publications

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“…However, a materials solution for the sub-7 nm node, which requires materials with a k value of 2.2, is not yet available. 2 Reduction in delay times, overall power consumption, and parasitic intermetal capacitances provide the motivation to research newer materials and interconnect schemes and lower the capacitance of back-end-of-line structures. With continuous shrinkage of device dimensions, interconnect delays become significant in comparison to transistor performance delays in ultralarge scale integrated devices.…”

Section: A Integration Challenges and Desired Properties Of Ultralowmentioning

confidence: 99%

Study and optimization of PECVD films containing fluorine and carbon as ultra low dielectric constant interlayer dielectrics in ULSI devices

Sundaram

Lee

Goeckner

et al. 2015

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Fluorinated amorphous carbon films that are thermally stable at 400 C have been deposited in a plasma enhanced chemical vapor deposition system using tetrafluorocarbon and disilane (5% by volume in helium) as precursors. The bulk dielectric constant (k) of the film has been optimized from 2.0/2.2 to 1.8/1.91 as-deposited and after heat treatment, by varying process parameters including power density, deposition temperature, and wall temperature. Films, failing shrinkage rate requirements, possessing promising k-values have been salvaged by utilizing a novel extended heat treatment scheme. Film properties including chemical bond structure, F/C ratio, refractive index, surface planarity, contact angle, dielectric constant, flatband voltage shift, breakdown field potential and optical energy gap have been evaluated by varying process pressure, power, substrate temperature, and flow rate ratio of processing gases. Both x-ray photoelectron spectroscopy and FTIR results confirm that the stoichiometry of the ultralow k film is close to that of CF 2 with no oxygen. C-V characteristics indicate the presence of negative charges that are either interface trapped charges or bulk charges. Average breakdown field strength was in the range of 2-8 MV/cm while optical energy gap varied between 2.2 and 3.4 eV.

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Section: A Integration Challenges and Desired Properties Of Ultralowmentioning

confidence: 99%

Study and optimization of PECVD films containing fluorine and carbon as ultra low dielectric constant interlayer dielectrics in ULSI devices

Sundaram

Lee

Goeckner

et al. 2015

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…In recent years, low-dielectric-constant materials have been commonly employed in microwave devices, ultra-large-scale integrated circuits, and other applications (Sato et al, 2013;Hong et al, 2020). Many materials have been introduced to achieve lower dielectric constants, such as Al 2 O 3 (Su et al, 2014), SiCN (Zhou and Zhang 2015), BN (Hong et al, 2016), SiC (Milosevic and King 2014), and SiO 2 (Carta et al, 2014;Joseph et al, 2015). Although the resulting materials have excellent properties, they are expensive and limited in terms of output.…”

Section: Introductionmentioning

confidence: 99%

Preparation of Low-Dielectric-Constant Kaolin Clay Ceramics by Chemical Cleaning Method

Yang

2021

Front. Mater.

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Kaolin clay is an inexpensive and abundant material with potential for use as a low-dielectric-constant ceramic; however, the natural metallic oxides the clay contains hinder such applications. In this study, kaolin clay ceramics with excellent physical and dielectric properties were synthesized using kaolin clay as the raw material by chemical cleaning and sintering. Characterization of the resulting samples showed that the sulfuric acid treatment has a significant influence on the metallic oxide content and dielectric properties of the kaolin clay ceramics. When the kaolin clay raw material was treated with sulfuric acid three times, the dielectric constant decreased from 5.12 to 3.75 and the Vickers hardness increased from 946 to 1,214 kg/mm2 relative to the ceramic prepared from the untreated clay. Therefore, these ceramics exhibit significant potential for use in the microelectronics industry.

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Preparation and dielectric properties of SiO2/silicate-1 ceramics

2016

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Porous low k film with multilayer structure used for promoting adhesion to SiCN cap barrier layer

Cited by 4 publications

References 18 publications

Study and optimization of PECVD films containing fluorine and carbon as ultra low dielectric constant interlayer dielectrics in ULSI devices

Study and optimization of PECVD films containing fluorine and carbon as ultra low dielectric constant interlayer dielectrics in ULSI devices

Preparation of Low-Dielectric-Constant Kaolin Clay Ceramics by Chemical Cleaning Method

Preparation and dielectric properties of SiO2/silicate-1 ceramics

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