Porous-like silicon prepared from Si:H annealed at high argon pressure

Abstract

Structural and photoluminescence (PL) properties of Si implanted with hydrogen, Si : H (at hydrogen doses ≤ 4 × 10 16 cm −2 and ion energy E ≤ 135 keV) and subjected to heat treatments up to 1320 K under hydrostatic Ar pressure up to 1.2 GPa were investigated. The structure of the temperature−pressure treated Si : H exhibits similarities to the structure of porous silicon. Visible PL at about 400−440 nm detected for Si : H treated at 720 K/920 K and 1.2 GPa is related to the presence of hydrogen and oxygen atoms in the implanted region of Si : H.

Porous‐like structures prepared by temperature‐pressure treatment of heavily hydrogenated silicon

“…It important to note that the properties of HT -HP treated Si:H and of RSi:H in this respect are quite similar: also RSi:H indicates comparatively strong PL at 2.83 eV shifting to lower energies if HT -HP treated at higher temperatures. The PL lines at about 420 -440 nm (corresponding to E = 2.95 -2.82 eV) have been reported for HT -HP treated medium -doped (D = 4x10 16 cm -2 ) [2] as well as for heavily hydrogen doped (D = 3x10 17 cm -2 ) Si:H, annealed under atmospheric pressure at ≤ 970 K [13]. This PL seems to be related to the presence of hydrogen (retained in the near-surface samples areas at HP) as well as of gettered oxygen [2,13] and most probably originates from some Si-O-H complexes located in the near-surface areas of HT -HP treated Si:H as well as of reference RSi:H.…”

“…In the case of HT -HP treated Si:H, the X-Ray diffuse scattering intensity increases with HP (compare Figs 2A with 2B and 2C) and treatment time, t (Figs 2C and 2D) but decreases with HT. This can be interpreted as an evidence of the HP -stimulated creation of small hydrogen -filled bubbles and microcavities, of dimensions decreasing with HP [2]. The average size, d d , of distorted region estimated from Huang scattering [10] increases with t (see caption of Fig.…”

“…for smart cut processing [1]. High temperature -high hydrostatic pressure (HT -HP) treatment of Si:H prepared by medium -dose implantation (D ≤ 4x10 16 cm -2 ) results in a creation of porous (spongy) -like buried Si layer, exhibiting interesting properties [2], e. g. visible photoluminescence (PL). The purpose of present work is to check how the HT -HP treatment of very heavily hydrogenated Si:H prepared by high -dose (D = 2.7x10 17 cm -2 ) hydrogen implantation at low energy (E) or by hydrogen plasma etching (reference samples) affects their microstructure and related properties (compare [3,4]).…”

Buried spongy‐like layers in silicon implanted with He+, annealed and treated in D+ plasma

“…9 it can be seen that, upon annealing under high pressure, more deuterium atoms are still present in the sub-surface region of Si:He:D, thus indicating a suppression of the deuterium out-diffusion. Thus, the high pressure processing of Cz-Si:He creates the conditions, under which a formation of the stiffer layer, preventing hydrogen out-diffusion in case of hydrogen based ion-cut processes, can be expected (compare [1][2][3][4][7][8][9]). …”

“…1 Introduction The structure of hydrogen -containing buried layers in oxygen-containing Czochralski grown single crystalline silicon (Cz-Si), produced by implantation of Cz-Si with H 2 + ions (Cz-Si:H) and subsequent processing under high temperature -pressure (HT -HP) resembles the porous Si structures [1,2]. The same has been observed after implantation with heavy hydrogen isotope, D + [3] and in Cz-Si co-implanted with H 2 + and He + [4].…”