Porous III–V compounds as nonlinear optical materials

Tiginyanu, I. M.; Kravetsky, I. V.; Langa, S.; Marowsky, G.; Monecke, J.; Föll, H.

doi:10.1002/pssa.200306567

Cited by 44 publications

(30 citation statements)

References 9 publications

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“…[22] Similarly, ordered pore arrays in InP are optically homogeneous, i.e., do not show strong absorption, while random arrays at comparable geometries are not. [49] Pore morphologies obtained during anodization may differ widely from material to material, and within one material, depending on the precise position in parameter-space chosen for the experiment. Most important in this respect are current density in galvanostatic experiments or voltage in potentiostatic experiments, the sample nature and conductivity, the sample orientation, the nature and temperature of the electrolyte, and the measures taken for the initial pore nucleation.…”

Section: Pore Geometry and Morphologymentioning

confidence: 99%

Pores in III–V Semiconductors

Föll¹,

et al. 2003

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The paper reviews electrochemically etched pores in III–V compound semiconductors (GaP, InP, GaAs) with emphasis on nucleation and formation mechanisms, pore geometries and morphologies, and to several instances of self‐organization. Self‐ organization issues include the formation of single‐crystalline two‐dimensional hexagonal arrays of pores with lattice constants as small as 100 nm found in InP, synchronized and unsynchronized diameter oscillations coupled to current and voltage oscillations, and pore domain formation. The findings are discussed in relation to pores observed in silicon. Some novel properties of the porous layers obtained in III–V compounds are briefly described.

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Section: Pore Geometry and Morphologymentioning

confidence: 99%

Pores in III–V Semiconductors

Föll¹,

et al. 2003

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“…13,14 A large birefringence has also been observed in porous GaP and InP, allowing phase matching for second-harmonic generation. 15 Our aim in this paper is to present data concerning the structural and optical properties of porous GaP formed on ͑100͒ and ͑111͒A substrates by anodic etching. In silicon, 3,16 the pores tend to grow in ͗100͘ directions.…”

Section: Introductionmentioning

confidence: 99%

Structural and photoluminescence properties of porous GaP formed by electrochemical etching

Tomioka

Adachi

2005

Journal of Applied Physics

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The structural and optical properties of porous GaP have been studied by scanning electron microscopy, spectroscopic ellipsometry, and photoluminescence ͑PL͒ spectroscopy. Porous GaP layers were fabricated by anodic etching in HF : H 2 O:C 2 H 5 OH=1:1:2 electrolyte on n-type ͑100͒ and ͑111͒A substrates. The morphology of the porous GaP layer is found to depend strongly on the surface orientation. Apart from the red emission band at ϳ1.7 eV, a supra-band-gap ͑E g X ͒ emission has been clearly observed on the porous GaP ͑111͒A sample. The anodic porous layer on the ͑100͒ substrate, on the other hand, has shown only the red emission at 300 K and both red and green donor-acceptor pair emissions at low temperatures. The correlation between the PL properties and the porous morphology is discussed. An optical transition model is also proposed for the explanation of the PL emission properties of the porous GaP samples.

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“…8 In addition to affecting nonlinear optical processes, changes in the sample surface architecture affect transient currents generated in semiconductors that may modify the THz emission. In the present letter, we study the impact of electrochemically introduced porosity upon the characteristics of far-infrared emission from InP (111) samples.…”

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Enhanced terahertz emission from porous InP (111) membranes

Reid

Cravetchi

Fedosejevs

et al. 2005

Applied Physics Letters

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Bulk n-InP wafers and porous membrances with (111) crystallographic orientation have been illuminated with 120 fs pulses of 800 nm radiation from a Ti:Sapphire amplified laser system. Terahertz (THz) emission from samples was measured as a function of excitation fluence in the reflection geometry. It was established that the THz emission from both bulk and porous InP (111) saturates at high excitation fluence, emitting comparable levels of far-infrared radiation. Below saturation, however, the emission from the porous InP (111) membrane was found to be approximately an order of magnitude greater in radiated electric field or approximately two orders of magnitude in power relative to the bulk sample. The observed increase in efficiency from the porous, relative to the bulk samples, can be attributed either to the local field enhancement in the porous network for the nonlinear contribution to the radiated THz fields, or to modifications of the transient currents resulting in enhanced THz radiation.

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Porous III–V compounds as nonlinear optical materials

Cited by 44 publications

References 9 publications

Pores in III–V Semiconductors

Pores in III–V Semiconductors

Structural and photoluminescence properties of porous GaP formed by electrochemical etching

Enhanced terahertz emission from porous InP (111) membranes

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