2000
DOI: 10.1149/1.1393306
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Porous Anodic Film Formation on an Al-3.5 wt % Cu Alloy

Abstract: Anodic film growth has been undertaken on an electropolished Al-3.5 wt % Cu alloy to determine the influence of copper in solid solution on the anodizing behavior. At the commencement of anodizing of the electropolished alloy, in the presence of interfacial enrichment of copper, Al 3ϩ and Cu 2ϩ ions egress and O 2Ϫ ion ingress proceed; film growth occurs at the alloy/film interface though O 2Ϫ ion ingress, with outwardly mobile Al 3ϩ and Cu 2ϩ ions ejected at the film/electrolyte interface, and field-assisted … Show more

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Cited by 34 publications
(16 citation statements)
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References 18 publications
(33 reference statements)
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“…The presence of the second phase particles including Cu-Al within the 2024-T3 alloy is the reason for the nodular structure. Work using an Al-3.5% Cu binary alloy has displayed the same nodular structure when anodised in sulphuric acid 88 .…”
Section: Standard Caa 40/50v Processmentioning
confidence: 82%
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“…The presence of the second phase particles including Cu-Al within the 2024-T3 alloy is the reason for the nodular structure. Work using an Al-3.5% Cu binary alloy has displayed the same nodular structure when anodised in sulphuric acid 88 .…”
Section: Standard Caa 40/50v Processmentioning
confidence: 82%
“…In the 2xxx series alloys of interest in the present study, the copper-rich second phases affect adversely the film morphology and integrity, especially due to the formation of relatively large voids in the film 79,88 . Oxidation of copper and incorporation of Cu 2+ into the anodised alumina are also associated with O 2 gas evolution causing local film cracking and can lead to the nonuniform flow of ionic current through the film, due to the significant volume of O 2 bubbles within the anodic film 88,91 .…”
Section: Electrochemical Treatmentsmentioning
confidence: 96%
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“…At the central area of the anodic film the ratio is in good accord with the ideal as represented in Table 1, but at the upper and lower areas the values are deviated from the ideal. According to the growth mechanisms of anodic oxide layers [16,17], Al 3+ from aluminum substrate migrates outward to the direction of electrolyte/oxide interface through oxide layer because of strong electric field by an applied voltage, and, likewise, O 2− incorporated into the layer from electrolytes moves inward to the aluminum substrate. Al 3+ and O 2− ions transported from each side combine to form Al 2 O 3 in the mid area of the existing oxide, and, as further reaction takes place, the product layer becomes thicker.…”
Section: Resultsmentioning
confidence: 99%
“…Lokale Ausscheidungsanreicherungen bewirken die ungleichmäßige Rücklösung der Porenwände und eine räumlich inhomogene Schichtbildungsrate lenkt die Wachstumsrichtung der Poren aus der Schichtnormalen. Dabei bestimmt die Größe der Ausscheidungen signifikant die lokale Porenstruktur [4][5][6][7][8][9][10].…”
Section: Motivationunclassified