Pore Formation on n-InP(100) in Acidic Liquid Ammonia at 223 K

Gonçalves, Anne‐Marie; Santinacci, Lionel; Eb, Alexandra; Gérard, I.; Mathieu, C.; Etchéberry, Arnaud

doi:10.1149/1.2434201

Cited by 45 publications

(58 citation statements)

References 25 publications

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“…1a) showed a smooth surface morphology. Figure 1b showed a coral-like pore morphologies, may be due to the presence of ammonia in HF:HNO 3 (1:4), which has been reported before in InP [10]. Figure 2 shows the room temperature PL spectra of the as-grown and the porous GaN films.…”

Section: Methodssupporting

confidence: 64%

Enhancing Responsivity of Porous GaN Metal-Semiconductor-Metal Ultraviolet Photodiodes by Using Photoelectrochemical Etching

Al-Heuseen

Hashim

2012

Acta Phys. Pol. A

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In this paper porous and as-grown GaN metal-semiconductor-metal photodiodes with Ni contact electrodes were fabricated. Structural and optical properties were studied of the both samples. Both detectors show a sharp cut-off wavelength at 370 nm, with a maximum responsivity of 0.14 A/W and 0.065 A/W achieved at 360 nm for porous GaN and as-grown metal-semiconductor-metal photodetectors, respectively. The metal-semiconductormetal photodiode based on porous GaN shows enhanced twice magnitude of responsivity relative to the as-grown GaN metal-semiconductor-metal photodiode. Enhancement of responsivity can be attributed to the relaxation of stress and reduction of surface pit density in the porous sample. The porous sample showed a significantly low dark current at 5 V as compared to as grown sample.

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Section: Methodssupporting

confidence: 64%

Enhancing Responsivity of Porous GaN Metal-Semiconductor-Metal Ultraviolet Photodiodes by Using Photoelectrochemical Etching

Al-Heuseen

Hashim

2012

Acta Phys. Pol. A

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“…Particular electrochemical behaviour associated to singular pore morphologies have been previously described [15]. For a galvanostatic treatment from 1 to 100 mA·cm -2 , identical and highly reproducible electrochemical behaviour and morphologies have been observed for a same amount of charge.…”

Section: Introductionmentioning

confidence: 71%

“…In addition to the absence of oxygen, NH 3 liq. exhibits chemical and physical properties [15] obviously different from water: a wide range of pH (33 units), a low liquid temperature domain (195 K to 240 K) at atmospheric pressure, a viscosity coefficient and dielectric constant four times lower than water, and the highest donor number [16].…”

Section: Introductionmentioning

confidence: 99%

Pore growth on n ‐InP in liquid ammonia: electrode potential and morphology evolution

Gonçalves

Santinacci

et al. 2008

Phys. Status Solidi (c)

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In this paper we report the pore formation onto n ‐InP (100) in acidic liquid ammonia at 223 K, by applying a constant current density of 2 mA·cm–2. The evolution of the electrode potential and the pore morphology has been investigated in this uncommon non‐aqueous medium. This solvent provides true water free and oxygen free conditions. Specific and reproducible electrochemical behaviour have been obtained. An original evolution of the porous structure has been observed by scanning electron microscopy. Tortuous current line oriented pores are formed. Pores are organized in hemispherical depressions and a multilayered structure is also evidenced. A three distinguished steps evolution has been established. In the first step, an insoluble passive layer is formed on surface, followed by the nucleation of the porous layer. The second phase corresponds to the formation of the first porous layer; while the third stage corresponds to the periodic lift‐off of the porous layer constituting thus a multilayered structure. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…11 The porous etching in strongly acidic (e. g. HCl or HNO 3 12 ) or alkaline (e.g. KOH 13 ) solutions leads * Electrochemical Society Member.…”

Section: 10mentioning

confidence: 99%

“…9,10 An original coral-like geometry is observed when InP is etched in halide-containing liquid ammonia. 11 The porous etching in strongly acidic (e. g. HCl or HNO 3 12 ) or alkaline (e.g. KOH 13 ) solutions leads * Electrochemical Society Member.…”

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confidence: 99%

Investigations of the Anodic Porous Etching of n-InP in HCl by Atomic Absorption and X-ray Photoelectron Spectroscopies

Santinacci

Bouttemy

Petit

et al. 2018

J. Electrochem. Soc.

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The electrochemical porous etching of n-InP in 1 M HCl has been investigated by monitoring the mass of In 3+ released during and after the anodic polarization. The study has been performed on both crystal-oriented (CO) and current line-oriented (CLO) pores grown at 10 mA·cm −2 and 5 V vs Ag/AgCl. An unexpected evolution of the mass of In 3+ has been measured when the electrochemical dissolution process is stopped. It indicates a mass loss more than twice higher after 2 or 3 hours. This demonstrates that the accurate amount of dissolved InP must be considered a longtime after the end of the polarization. The comparisons of the etched masses for CO and CLO pores with the values calculated from the coulometric charges indicate that the etching processes are similar for the two pore geometries and that the dissolution valence for InP is 2. The chemical analyses, performed by X-ray photoelectron spectroscopy, reveal that the main corrosion products are Cl-containing compounds such as InCl 3 . This gives valuable information to confirm an InP porous etching mechanism proposed earlier in literature. Likewise other one-dimensional nanostructures, electrochemically grown porous semiconductors have become an attractive field of interest. Though numerous attempts to understand the pore formation have been carried out, crucial mechanistic parameters such as the dissolution valence (z) are still not clarified for III-V compounds since most of the studies refer to the porous etching of Si.1 Gravimetric investigations have pointed out different z during electropolishing and pore formation on Si.2 The dissolution valence is 4 (the expected value since Si is a tetravalent element) during electropolishing and it does not depend on the applied current density ( j), the doping or the electrolyte concentration (c). Conversely, z varies, from 2 to 4, with those parameters during porous etching. Furthermore, the dissolution valence during the pore growth can be 4 at the tips and 2 on the walls. 3 It illustrates that porous dissolution process is a tricky phenomenon and it is different from uniform polishing.The pore growth mechanisms reported in literature can be divided in two families: "chemical" and "physical" models. The latter are based on the charge carrier distribution at the semiconductor/electrolyte interface and can basically be applied to any semiconductor since no chemical aspects are considered. However strong differences are observed between Si, which is an elemental semiconductor, and III-V compounds or between III-V materials themselves. 4 Thus chemical aspects must also be considered to depict accurately the porous dissolution of such materials. The peculiar dissolution along 111 B directions leading to crystal-oriented (CO) pores in GaP, GaAs and InP (with B referring to the second element for A-B compounds, e. g. P in InP and GaP) [5][6][7] or the catacomb-like pore morphology observed solely on GaP 8 emphasizes the influence of the chemical nature of the semiconductors on the pore growth. The chemical aspect of the...

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Pore Formation on n-InP(100) in Acidic Liquid Ammonia at 223 K

Cited by 45 publications

References 25 publications

Enhancing Responsivity of Porous GaN Metal-Semiconductor-Metal Ultraviolet Photodiodes by Using Photoelectrochemical Etching

Enhancing Responsivity of Porous GaN Metal-Semiconductor-Metal Ultraviolet Photodiodes by Using Photoelectrochemical Etching

Pore growth on n ‐InP in liquid ammonia: electrode potential and morphology evolution

Investigations of the Anodic Porous Etching of n-InP in HCl by Atomic Absorption and X-ray Photoelectron Spectroscopies

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