Pore Etching in III-V and II-VI Semiconductor Compounds in Neutral Electrolyte

Tiginyanu, I. M.; Ursaki, V. V.; Monaico, Eduard; Foca, E.; Föll, H.

doi:10.1149/1.2771076

Cited by 54 publications

(44 citation statements)

References 13 publications

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“…Formation of thin nanomembranes was recently demonstrated in anodically etched n-InP, 30 thus opening new possibilities for morphology design in semiconductor materials via electrochemical etching. [31][32][33] Formation of such membranes in n-GaN is indicative of the accumulation of excess negative charge in the areas comprising the emerging ultrathin membranes. Note that ultrathin GaN membranes can be created in a controlled fashion on polar GaN surfaces by using low-fluence low-energy ion beam treatment with subsequent PEC etching of the samples.…”

Section: Ecs Journal Of Solid State Science and Technology 5 (5) P21mentioning

confidence: 99%

Self-Organized Three-Dimensional Nanostructured Architectures in Bulk GaN Generated by Spatial Modulation of Doping

Tiginyanu

Stevens‐Kalceff

Sarua

et al. 2016

ECS J. Solid State Sci. Technol.

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Self-organized 3D nanostructured architectures including quasi-ordered concentric hexagonal structures generated during the growth of single crystalline n-GaN substrates by hydride vapor phase epitaxy (HVPE) are reported. The study of as-grown samples by using Kelvin Probe Force Microscopy shows that the formation of self-organized architectures can be attributed to fine modulation of doping related to the spatial distribution of impurities. The specific features of nanostructured architectures involved have been brought to light by using electrochemical and photoelectrochemical etching techniques which are highly sensitive to local doping. The analysis of the results shows that the formation of self-organized spatial architectures in the process of HVPE is caused by the generation of V-pits and their subsequent overgrowth accompanied by the growth in variable direction. It is demonstrated for the first time that the electrical and luminescence properties of HVPE-grown GaN are spatially modulated throughout, including islands between overgrown V-pit regions. The dependence of doping upon growth direction is confirmed by the micro-cathodoluminescence characterization of HVPE-grown pencil-like microcrystals exposing various crystallographic planes along the tip. These results are indicative of new possibilities for defect engineering in gallium nitride and for three-dimensional spatial nanostructuring of this important electronic material by controlling the growth direction. Gallium Nitride (GaN), a wide-bandgap semiconductor compound (E g = 3.4 eV at 300 K), is considered nowadays the second most important semiconductor material after Si. Over the past decades it has played a major role in the development of modern solid-state lighting industry.1-3 An intensive investigation of this compound started in 1970's, but with minimal success in the development of real applications. In the absence of native bulk material, GaN epilayers were grown on foreign substrates and, as a result of the large lattice mismatch and difference in thermal expansion coefficients, the overgrown films contained a high concentration of threading dislocations. The fascinating point, however, is that even in the presence of very high concentrations of dislocations, sometimes exceeding 10 10 cm −2 , gallium nitride exhibits intense luminescence, a property that makes the compound unique in comparison with other III-V materials, such as GaAs, GaP and InP. This particular feature along with other material characteristics were of paramount importance for the development and subsequent commercialization of GaN-based blue light emitting diodes by the mid-1990s. 4 This significant optoelectronic success resulted in the Nobel Prize for Physics being awarded to Shuji Nakamura, Isamu Akasaki and Hiroshi Amano, in 2014. There is no doubt that lighting technologies based on GaN and related nitrides will continue their impactful evolution, particularly in view of the recent demonstration of electrically pumped inversionless polariton lasing at room temper...

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Section: Ecs Journal Of Solid State Science and Technology 5 (5) P21mentioning

confidence: 99%

Self-Organized Three-Dimensional Nanostructured Architectures in Bulk GaN Generated by Spatial Modulation of Doping

Tiginyanu

Stevens‐Kalceff

Sarua

et al. 2016

ECS J. Solid State Sci. Technol.

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“…10 Porous semiconductor formation through electrochemical and chemical means, including silicon, are now very well known 5, [11][12][13][14][15] and the fundamental basics of electrochemically and related methods for isotropic and crystallographically controlled etching have been established. The discovery of light-emitting nanoporous Si 3, 16,17 propelled investigations of porosity formation in IIIÀV [18][19][20] and other Group IV semiconductors 21,22 and II-VI materials. 23,24 The low cost and fabrication simplicity of etching routes allow Si to be fabricated with various structure-dependent properties useful in various applications in optical and photovoltaic materials 25,26 micro-and optoelectonics, 27,28 and chemical and biological sensors 8,29 due to its biocompatibility.…”

Section: Introductionmentioning

confidence: 99%

Doping controlled roughness and defined mesoporosity in chemically etched silicon nanowires with tunable conductivity

McSweeney

Lotty

Mogili

et al. 2013

Journal of Applied Physics

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By using Si(100) with different dopant type (n++-type (As) or p-type (B)), we show how metal-assisted chemically etched (MACE) nanowires (NWs) can form with rough outer surfaces around a solid NW core for p-type NWs, and a unique, defined mesoporous structure for highly doped n-type NWs. We used high resolution electron microscopy techniques to define the characteristic roughening and mesoporous structure within the NWs and how such structures can form due to a judicious choice of carrier concentration and dopant type. The n-type NWs have a mesoporosity that is defined by equidistant pores in all directions, and the inter-pore distance is correlated to the effective depletion region width at the reduction potential of the catalyst at the silicon surface in a HF electrolyte. Clumping in n-type MACE Si NWs is also shown to be characteristic of mesoporous NWs when etched as high density NW layers, due to low rigidity (high porosity). Electrical transport investigations show that the etched nanowires exhibit tunable conductance changes, where the largest resistance increase is found for highly mesoporous n-type Si NWs, in spite of their very high electronic carrier concentration. This understanding can be adapted to any low-dimensional semiconducting system capable of selective etching through electroless, and possibly electrochemical, means. The process points to a method of multiscale nanostructuring NWs, from surface roughening of NWs with controllable lengths to defined mesoporosity formation, and may be applicable to applications where high surface area, electrical connectivity, tunable surface structure, and internal porosity are required

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“…The direct formation of porous structures has also been reported on semiconductor materials such as Si, [4][5][6]7,8 GaP,9,10 InP, 11-13 GaN, 14 and CdSe. 8 The structural properties and their tunability have been intensely investigated on III-V materials in an effort to improve electrical and optical properties.We recently succeeded in anodically forming arrays of straight nanopores on n-InP͑001͒ substrates. [15][16][17] The nanopores were laterally separated by InP nanowalls several tens of nanometers thick and formed in a straight vertical direction greater than several tens of micrometers.…”

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confidence: 99%

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confidence: 99%

“…The porous alumina made from aluminum films has particular promise 2,3 because of its unique nanohole array structures, which are formed in a self-organized manner, and has been used as a template for various devices. The direct formation of porous structures has also been reported on semiconductor materials such as Si, [4][5][6] GaAs, 7,8 GaP, 9,10 InP, [11][12][13] GaN, 14 and CdSe. 8 The structural properties and their tunability have been intensely investigated on III-V materials in an effort to improve electrical and optical properties.…”

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confidence: 99%

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Photoelectrochemical Etching and Removal of the Irregular Top Layer Formed on InP Porous Nanostructures

Sato¹,

Mizohata²

2008

Electrochem. Solid-State Lett.

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A photoelectrochemical ͑PEC͒ process was developed to remove the irregular top layer from InP porous nanostructures. After anodic formation of a nanopore array, the PEC process repeated in the same electrolyte under illumination. The etching rate of the pore surfaces was strongly associated with their structural properties, being greater in the irregular top layer. The irregular top layer was completely removed by monitoring and controlling the anodic photocurrents in the ramped bias mode. © 2008 The Electrochemical Society. ͓DOI: 10.1149/1.2844216͔ All rights reserved.Manuscript received December 11, 2007. Available electronically February 20, 2008 A lot of research has been devoted to producing high-density arrays of nanostructures due to both their applications to future quantum electronic and optoelectronic devices and to downsizing chemical and biochemical sensors.1 The porous structure formed by the electrochemical anodic process is one of the more promising building-block candidates of the aforementioned devices. The porous alumina made from aluminum films has particular promise 2,3 because of its unique nanohole array structures, which are formed in a self-organized manner, and has been used as a template for various devices. The direct formation of porous structures has also been reported on semiconductor materials such as Si, [4][5][6]7,8 GaP,9,10 InP, 11-13 GaN, 14 and CdSe. 8 The structural properties and their tunability have been intensely investigated on III-V materials in an effort to improve electrical and optical properties.We recently succeeded in anodically forming arrays of straight nanopores on n-InP͑001͒ substrates. [15][16][17] The nanopores were laterally separated by InP nanowalls several tens of nanometers thick and formed in a straight vertical direction greater than several tens of micrometers. We previously reported that pore diameter and wall thickness can be controlled by adjusting the electrochemical anodic and cathodic conditions. 17 However, a disordered irregular layer usually forms during the initial stage of pore formation and partly remains on top of the ordered porous layer. Because this irregular layer has a thickness in the range from a few hundred nanometers to several micrometers, it degrades electrical and optical properties. Thus, complete removal of the irregular top layer has been one of the key issues in wide application of porous nanostructures for semiconductors.We report here on a photoelectrochemical ͑PEC͒ process developed to completely remove the irregular top layer from the InP porous surfaces. The PEC process can be repeated continuously after porous structures are anodically formed in the same electrolyte. Our present approach is much simpler and more controllable than other methods such as dry etching and conventional chemical etching.Our PEC process is schematically shown in Fig. 1a. The template porous structures were first formed by an anodic reaction in the dark, 16 and then the porous surface was photoelectrochemically etched in the same electrolyte...

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Pore Etching in III-V and II-VI Semiconductor Compounds in Neutral Electrolyte

Cited by 54 publications

References 13 publications

Self-Organized Three-Dimensional Nanostructured Architectures in Bulk GaN Generated by Spatial Modulation of Doping

Self-Organized Three-Dimensional Nanostructured Architectures in Bulk GaN Generated by Spatial Modulation of Doping

Doping controlled roughness and defined mesoporosity in chemically etched silicon nanowires with tunable conductivity

Photoelectrochemical Etching and Removal of the Irregular Top Layer Formed on InP Porous Nanostructures

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