Polyurethane triblock copolymer gate dielectrics for low-voltage organic thin-film transistors

In this study, a high-K material, aluminum oxide (AlOx), as the dielectric of organic field-effect transistors (OFETs) was used to reduce the threshold and operating voltages, while focusing on achieving high-electrical-stability OFETs and retention in OFET-based memory devices. To achieve this, we modified the gate dielectric of OFETs using polyimide (PI) with different solid contents to tune the properties and reduce the trap state density of the gate dielectric, leading to controllable stability in the N, N’-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13)-based OFETs. Thus, gate field-induced stress can be compensated for by the carriers accumulated due to the dipole field created by electric dipoles within the PI layer, thereby improving the OFET’s performance and stability. Moreover, if the OFET is modified by PI with different solid contents, it can operate more stably under fixed gate bias stress over time than the device with AlOx as the dielectric layer only can. Furthermore, the OFET-based memory devices with PI film showed good memory retention and durability. In summary, we successfully fabricated a low-voltage operating and stable OFET and an organic memory device in which the memory window has potential for industrial production.

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“…The corresponding electrical characteristics of our OFETs operating at 2 V are excellent, as shown in Table S2 [35][36][37][38][39][40][41][42].…”

Section: Electrical Measurements Of Ofetsmentioning

confidence: 84%

Enhancement of Stability in n-Channel OFETs by Modulating Polymeric Dielectric

et al. 2023

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“…11E). 68 Thin films of the resulting PU gate dielectrics exhibited excellent insulating properties (∼7 × 10 −7 A cm −2 at 1 V) as well as large areal capacitance (170 nF cm −2 ) with a film thickness of ∼50 nm. The fabricated OTFTs using N , N ‘-ditridecylperylene-3,4,9,10-tetracarboxylic diimide as the organic semiconductor show decent n -channel activity (0.023 ± 0.014 cm 2 V −1 s −1 ) with negligible hysteresis at a low operating voltage of 1 V (Fig.…”

Section: Research Of Puu In the Insulation Layermentioning

confidence: 98%

Impact of polymer chemistry on the application of polyurethane/ureas in organic thin film transistors

Mu,

Sun,

Wan

2023

RSC Appl. Polym.

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“…Several studies have been conducted on PU dielectric layers and their applications in OTFTs. 15,[22][23][24][25][26] In this study, we synthesized fluorine-containing crosslinked polyurethane (FPU) dielectric materials that could be UV-cured at room temperature by introducing varying amounts of hexafluorobutyl acrylate (HFBA) into the PU chains through a thiolene click reaction. Pentaerythritol tetramercaptoacetate (PETMP) was added to accelerate the polymerization rate and improve the depth of the UV curing reaction.…”

Section: Introductionmentioning

confidence: 99%

“…Several studies have been conducted on PU dielectric layers and their applications in OTFTs. 15,22–26…”

Section: Introductionmentioning

confidence: 99%

Low temperature UV cross-linked fluorinated polyurethane for organic thin film transistors

Duan,

Liu,

Liu

et al. 2024

J. Mater. Chem. C

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Polyurethane triblock copolymer gate dielectrics for low-voltage organic thin-film transistors

Cited by 6 publications

References 53 publications

Enhancement of Stability in n-Channel OFETs by Modulating Polymeric Dielectric

Enhancement of Stability in n-Channel OFETs by Modulating Polymeric Dielectric

Impact of polymer chemistry on the application of polyurethane/ureas in organic thin film transistors

Low temperature UV cross-linked fluorinated polyurethane for organic thin film transistors

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