Polythienylenevinylene thin-film transistor with high carrier mobility

Fuchigami, Hiroyuki; Tsumura, Akira; Koezuka, Hiroshi

doi:10.1063/1.109680

Cited by 189 publications

(114 citation statements)

References 22 publications

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“…The highest mobility of 15.6 cm 2 V −1 s −1 was exhibited by vacuum deposited thin films of the C 7 -BBTN molecule. The molecular arrangement in the solid state was a typical herringbone structure with the long axis of the molecules being almost perpendicular to the substrate, a typical effect of the alkyl chain end substitution [37]. Hexamethylene tetrathiafulvalene [96] (HMTTF, Scheme 3b) single crystals showed mobility of 10 cm [63], which is the highest mobility among the promising class of organic semiconductors based on derivatives of the widely studied TTF molecule.…”

Section: Methodsmentioning

confidence: 99%

“…As a result they have a substantial impact in the processability and performance of organic semiconductors. The synthesis and fabrication of OTFTs based on polycrystalline, vapor deposited αtsexithiophene (6T, Scheme 1e with n = 0) [35,36] and its derivative with insulating end-attached alkyl side chains α − ω -dihexyl-sexithiophene (DH6T, Scheme 1e with n = 6) [37] films reported by Garnier et al played an important role in the evolution of the field of organic transistors. These publications delineated the strategies that should be followed as far as molecular orientation and packing are concerned in order to increase the performance of OTFTs.…”

Section: Progress In Performance Of Otfts 1984 To 2014mentioning

confidence: 99%

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Recent advances in organic field effect transistors

Abanoz¹,

Dimitrakopoulos²

2014

Turk J Phys

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Section: Methodsmentioning

confidence: 99%

Section: Progress In Performance Of Otfts 1984 To 2014mentioning

confidence: 99%

Recent advances in organic field effect transistors

Abanoz¹,

Dimitrakopoulos²

2014

Turk J Phys

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“…Poly͑2,5-thienylene vinylene͒ ͑PTV͒ films as semiconductor layer are deposited using a precursor-route process. 3 We systematically varied the processing conditions for the conversion from precursor to PTV, and we determined the average degree of conversion using the method described by Fuchigami et al 4 This enabled us to systematically study PTV transistors at various degrees of conversion ranging from 60% to 100%, and consequently over a range of field-effect mobilities, between 10 Ϫ4 and 10 Ϫ3 cm 2 /V s. Poly͑3-hexyl thiophene͒ ͑P3HT͒ is spin-coated from a 1 wt % chloroform solution. Films of poly͓͑2-methoxy-5-(3Ј,7Ј-dimethyloctyloxy͔͒-p-phenylene vinylene͒ (OC 1 C 10 -PPV) and poly͓͑2,5-di-(3Ј,7Ј-dimethyloctyloxy͔͒-p-phenylene vinylene͒ (OC 10 C 10 -PPV), are spun from a 0.5 wt % toluene solution.…”

mentioning

confidence: 99%

Scaling behavior and parasitic series resistance in disordered organic field-effect transistors

Meijer

Veenendaal

Huisman

et al. 2003

Applied Physics Letters

157

118

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The scaling behavior of the transfer characteristics of solution-processed disordered organic thin-film transistors with channel length is investigated. This is done for a variety of organic semiconductors in combination with gold injecting electrodes. From the channel-length dependence of the transistor resistance in the conducting ON-state, we determine the field-effect mobility and the parasitic series resistance. The extracted parasitic resistance, typically in the M⍀ range, depends on the applied gate voltage, and we find experimentally that the parasitic resistance decreases with increasing field-effect mobility. © 2003 American Institute of Physics. ͓DOI: 10.1063/1.1581389͔The interest in organic thin-film transistors ͑TFTs͒ has grown rapidly due to envisaged applications, such as integrated circuits 1 and active-matrix displays. 2 The switching speed of organic integrated circuits can be estimated from the performance of the individual transistors and is roughly proportional to ϳ FE /L 2 , 3 where L is the channel length of the transistor, and FE is the field-effect mobility. To reach higher switching speeds, the search for higher mobility materials is therefore important, but it is also of great interest to downsize the transistor geometries. In this work, the scaling behavior of the transfer characteristics with transistor channel length is investigated for a variety of solutionprocessable organic TFTs.In the experiments, we use heavily doped Si wafers as the gate electrode, with a 200-nm-thick layer of thermally oxidized SiO 2 as the gate-insulating layer. Using conventional lithography, gold source and drain contacts 100 nm thick are defined, with channel widths ranging from 1 mm to 1 cm and channel lengths between 0.75 and 40 m. The structures typically have an underetch of 0.5 m, which we neglect in the following analysis. A 10-nm layer of titanium acts as an adhesion layer for the gold on the SiO 2 . The SiO 2 layer is treated with the primer hexamethyldisilazane to make the surface hydrophobic. No special care is taken to clean the gold surface prior to deposition of the semiconductor. Poly͑2,5-thienylene vinylene͒ ͑PTV͒ films as semiconductor layer are deposited using a precursor-route process. 3 We systematically varied the processing conditions for the conversion from precursor to PTV, and we determined the average degree of conversion using the method described by Fuchigami et al. 4 This enabled us to systematically study PTV transistors at various degrees of conversion ranging from 60% to 100%, and consequently over a range of field-effect mobilities, between 10 Ϫ4 and 10 Ϫ3 cm 2 /V s. Poly͑3-hexyl thiophene͒ ͑P3HT͒ is spin-coated from a 1 wt % chloroform solution. Films of poly͓͑2-methoxy-5-(3Ј,7Ј-dimethyloctyloxy͔͒-p-phenylene vinylene͒ (OC 1 C 10 -PPV) and poly͓͑2,5-di-(3Ј,7Ј-dimethyloctyloxy͔͒-p-phenylene vinylene͒ (OC 10 C 10 -PPV), are spun from a 0.5 wt % toluene solution. Pentacene thin films are deposited using a precursor-route process. 3 The measurements are performed on freshly...

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“…26 In particular, the acene and oligothiophene derivatives represent two of the most heavily studied series of compounds used in organic semiconductors.…”

Section: -17mentioning

confidence: 99%

Theoretical Studies on 2-Hexylthieno[3,2-b]thiophene End-Capped Oligomers for Organic Semiconductor Materials

Park¹,

Kim²,

Kwon³

et al. 2012

Bulletin of the Korean Chemical Society

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The reorganization energy and the spectroscopic properties of 2,6-bis(5'-hexyl-thieno[3,2-b]thiophene-2'-yl)naphthalene (DH-TNT) and 2,6-bis(5'-hexyl-thieno[3,2-b]thiophene-2'-yl)anthracene (DH-TAT), which are composed of an acene unit and alkylated thienothiophene on both sides, as organic materials for display devices were calculated and the results were compared with experimental values. The lower reorganization energy of the DH-TAT over the DH-TNT calculated by the density functional theory is attributed to a smaller vibrational distortion because of the heavier building block of DH-TAT, and it shows a good field effect performance over the DH-TNT. The calculated spectra and the other spectroscopic characteristic of the compounds are well consistent with those of observed results.

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Polythienylenevinylene thin-film transistor with high carrier mobility

Cited by 189 publications

References 22 publications

Recent advances in organic field effect transistors

Recent advances in organic field effect transistors

Scaling behavior and parasitic series resistance in disordered organic field-effect transistors

Theoretical Studies on 2-Hexylthieno[3,2-b]thiophene End-Capped Oligomers for Organic Semiconductor Materials

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