Polysilicon thin film piezoresistive pressure microsensor: design, fabrication and characterization

Kumar, S. Santosh; Pant, B. D.

doi:10.1007/s00542-014-2318-1

Cited by 50 publications

(13 citation statements)

References 19 publications

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“…After the first monolithic capacitive pressure sensor was designed for medical-research applications in 1980 [13], silicon solution tablets technology and etch-stop technique were put forward to make the capacitive sensor [14]. Afterwards, the CPS with different microstructures had been deeply studied due to the introduction of MEMS (microelectromechanical systems) technology [15][16][17][18]. Ji et al [19] made the capacitive pressure sensor by a combination of a standard CMOS (Complementary Metal Oxide Semiconductors) process and bulk micromachining technology.…”

Section: Introductionmentioning

confidence: 99%

Microstructure-Based Interfacial Tuning Mechanism of Capacitive Pressure Sensors for Electronic Skin

et al. 2016

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In order to investigate the interfacial tuning mechanism of electronic skin (e-skin), several models of the capacitive pressure sensors (CPS) with different microstructures and several sizes of microstructures are constructed through finite element analysis method. The simulative pressure response, the sensitivity, and the linearity of the designed CPS show that the sensor with micropyramids has the best performance in all the designed models. The corresponding theoretically predicted sensitivity is as high as 6.3 × 10−7 fF/Pa, which is about 49 times higher than that without any microstructure. Additionally, these further simulative results show that the smaller the ratios ofL/Hof pyramid, the better the sensitivity but the worse the linearity. When the ratio ofL/Hof pyramid is about2, the sensitivity and the linearity could reach a balance point. The simulative results evidently provide the important theoretically directive significance for the further development ofe-skin.

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Section: Introductionmentioning

confidence: 99%

Microstructure-Based Interfacial Tuning Mechanism of Capacitive Pressure Sensors for Electronic Skin

et al. 2016

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“…Using analytical equations for analysis can lead to limiting the accuracy because of difference in clamping conditions of a plate and an actual diaphragm [7]. Also, it is difficult to obtain the analytical solutions in case of complex structures like bossed diaphragms.…”

Section: Theorymentioning

confidence: 99%

Sensitivity and non-linearity study and performance enhancement in bossed diaphragm piezoresistive pressure sensor

Nambisan

Kumar

Pant

2015

2015 19th International Symposium on VLSI Design and Test

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This paper describes a comparative study of sensitivity and non-linearity of conventional and bossed diaphragm piezoresistive pressure sensor along with a performance enhanced design. The proposed structures take into consideration corner compensation to avoid distortion of the mesa structure during fabrication of bossed diaphragm structure using wet bulk micromachining. Optimum piezoresistors locations are calculated with the help of simulations carried out using finite element method (FEM) based tool COMSOL © Multiphysics.Since the sensitivity and non-linearity of conventional and bossed diaphragm structures showed a linear trend, empirical formulae are proposed using linear fit for quick and approximate calculation of sensitivity and non-linearity for a particular sensor structure. It is observed that high stress regions are also present near the boss -diaphragm interface and hence a design with piezoresistors placed at these regions is also proposed. This design is found to be enhancing the performance of piezoresistive pressure sensor compared to the conventional piezoresistor placement.

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“…Although a single resistor can also perform the function of determining the pressure input based on change in resistance (Chung et al 1991;Motorola 1998), usually, four piezoresistors (connected in Wheatstone bridge configuration) are used for this purpose. Using a Wheatstone bridge helps in cancelling out the temperature effects due to TCR (Kumar and Pant 2014b). Different materials have been reported to exhibit the property of piezoresistance, such as silicon (Zhang et al 2007;Bian et al 2009), polysilicon (Tsai et al 2009;Malhaire and Barbier 2003), silicon carbide (Fraga et al 2010;Wu et al 2006), carbon fibre (Park et al 2007), diamond (Werner et al 1998;Wur et al 1995) etc.…”

Section: Introductionmentioning

confidence: 96%

Effect of piezoresistor configuration on output characteristics of piezoresistive pressure sensor: an experimental study

Kumar

Pant

2015

Microsyst Technol

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Polysilicon thin film piezoresistive pressure microsensor: design, fabrication and characterization

Cited by 50 publications

References 19 publications

Microstructure-Based Interfacial Tuning Mechanism of Capacitive Pressure Sensors for Electronic Skin

Microstructure-Based Interfacial Tuning Mechanism of Capacitive Pressure Sensors for Electronic Skin

Sensitivity and non-linearity study and performance enhancement in bossed diaphragm piezoresistive pressure sensor

Effect of piezoresistor configuration on output characteristics of piezoresistive pressure sensor: an experimental study

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