Polysilicon nanogap capacitive biosensors for the pH detection

Nazwa, T.; Hashim, U.; Saifullah, Azizullah; Dhahi, Th. S.

doi:10.1109/rsm.2011.6088335

Cited by 5 publications

(10 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The authors (Taib et al, 2011;Dhahi et al, 2012) proposed polysilicon nanogap capacitive biosensors. Fig 3 illustrates the nanogap cavity using SEM.…”

Section: Nano-bio Sensorsmentioning

confidence: 99%

“…SEM by JEOL: device A shows a nanogap cavity at 42nm using an in-testing pH sample(Taib et al, 2011). different types of pH; (b) Capacitance-Voltage relationship of 3, 5 and 10 of different types of pH(Taib et al, 2011).…”

mentioning

confidence: 99%

“…different types of pH; (b) Capacitance-Voltage relationship of 3, 5 and 10 of different types of pH(Taib et al, 2011).…”

mentioning

confidence: 99%

See 2 more Smart Citations

The latest trend in nano-bio sensor signal analysis

Teh

Jambek

Hashim

2016

Self Cite

View full text Add to dashboard Cite

If you would like to write for this, or any other Emerald publication, then please use our Emerald for Authors service information about how to choose which publication to write for and submission guidelines are available for all. Please visit www.emeraldinsight.com/authors for more information. About Emerald www.emeraldinsight.comEmerald is a global publisher linking research and practice to the benefit of society. The company manages a portfolio of more than 290 journals and over 2,350 books and book series volumes, as well as providing an extensive range of online products and additional customer resources and services.Emerald is both COUNTER 4 and TRANSFER compliant. The organization is a partner of the Committee on Publication Ethics (COPE) and also works with Portico and the LOCKSS initiative for digital archive preservation.

show abstract

“…The authors (Taib et al, 2011;Dhahi et al, 2012) proposed polysilicon nanogap capacitive biosensors. Fig 3 illustrates the nanogap cavity using SEM.…”

Section: Nano-bio Sensorsmentioning

confidence: 99%

mentioning

confidence: 99%

See 1 more Smart Citation

The latest trend in nano-bio sensor signal analysis

Teh

Jambek

Hashim

2016

Self Cite

View full text Add to dashboard Cite

show abstract

“…Silicon oxide was grown on top of the wafer with thickness about 178.98 nm. It was "estimated that for every 1 µm of SiO 2 grown, about 0.46 µm of silicon is consumed" [10]. After the oxidation process, polysilicon was deposited on top of the silicon oxide layer by using Low Pressure Chemical Vapor Deposition (LPCVD).…”

Section: A Device Fabricationsmentioning

confidence: 99%

Fabrication and characterization of undoped polysilicon nanowire for pH sensor

Yee

Arshad

Nuzaihan

et al. 2014

2014 IEEE International Conference on Semiconductor Electronics (ICSE2014)

View full text Add to dashboard Cite

Polysilicon has great benefit in application of pH sensor due to the unique properties and easiness to use top-down approach. In this paper, we present fabrication and characterization of undoped polysilicon nanowire (NW) for pH sensor application. The fabrication processes steps involve were photolithography, etching, deposition and oxidation. 3-aminopropyltriethoxysilane or APTES were used to enhance the sensitivity of polysilicon layer as well as able to provide surface modification by undergoing protonation and deprotonation process. Surface analysis using SEM were used for surface morphology analysis. Different types of pH solution provide different resistivity and conductivity towards polysilicon surface. In addition, voltage, current, conductance against pH level are characterized and compared. Alkaline solution has the higher current as compared to acidic. This was due to the polysilicon layer contains more holes which are easily being attracted bySiO¯ to the surface and hence, forming a strong channel from source to drain. Results obtain reveal a linearity of pH measurement with a corresponding sensitivity of 4.65 nS/pH.

show abstract

“…Based on the RD6 specification provided in Table 3, it is the suitable developer to develop the exposed PR1-2000A resist [15]. The wafer sample is then immersed in the developer solution to remove unwanted resist and time taken to develop is recorded.…”

Section: Photoresist Developmentmentioning

confidence: 99%

Photoresist microbridge pattern optimization at 1μm using conventional photolithography technique

Rao

Nurfaiz

Hashim

2013

RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics

View full text Add to dashboard Cite

One of the delicate processes in semiconductor microfabrication is the photolithography. It is the process that sets the design dimensions on various parts of the device. In order to complete this process, two requirements need to be satisfied. First is to create, the exact dimensions and pattern as established in design phase, which in other word can be referred as the resolution of the images on the wafer. The second is the correct placement of the device pattern on the wafer relative to the crystal orientation of the wafer substrate. This is called alignment or registration of patterns in correct position. This registration requirement is similar to the correct alignment of the different floors of a building. It is easy to visualize that misalignment of elevator shafts and stair wells would render the building useless. In a circuit, the effects of misaligned mask layers can cause the entire circuit to fail. In this paper we have reported a couple of results that leads to photoresist development and optimization technique as a standard manufacturing process to form 1μm microbridge for later process of size reduction to form nanogap. Therefore, at the final stage of fabrication, a nano-diagnostic biochip device is developed to use it as a biomolecule detection biosensor. The development of biosensors is still an open field and much remains to be done before many of these bioelectronic devices become commercialized. In this research, the key factors such as resist thickness, post-exposure bake (PEB) time and developer concentration are taken into account to study the optimum measurements and process. The thickness of resist will affect the resolution of image transferred and developing time. Both PEB and developer concentration also has the tendency to affect the device pattern and developing time. As the result, the photoresist thickness is optimized at 1500nm, the developer RD6 concentration diluted at 10:25 (DI water: RD6) and PEB time optimized at 65s.

show abstract

Polysilicon nanogap capacitive biosensors for the pH detection

Cited by 5 publications

References 7 publications

The latest trend in nano-bio sensor signal analysis

The latest trend in nano-bio sensor signal analysis

Fabrication and characterization of undoped polysilicon nanowire for pH sensor

Photoresist microbridge pattern optimization at 1μm using conventional photolithography technique

Contact Info

Product

Resources

About

Polysilicon nanogap capacitive biosensors for the pH detection

Cited by 5 publications

References 7 publications

The latest trend in nano-bio sensor signal analysis

The latest trend in nano-bio sensor signal analysis

Fabrication and characterization of undoped polysilicon nanowire for pH sensor

Photoresist microbridge pattern optimization at 1&#x03BC;m using conventional photolithography technique

Contact Info

Product

Resources

About

Photoresist microbridge pattern optimization at 1μm using conventional photolithography technique