Polyperinaphthalene film formation by pulsed laser deposition with a target of perylenetetracarboxylic dianhydride

Abstract

Thin films of polyperinaphthalene (PPN) have been obtained by Nd:YAG pulsed laser deposition with a target of perylenetetracarboxylic dianhydride. Components of the films depend on the power and wavelength of the laser light, which is verified by absorption spectra, Raman scattering spectra, and in situ mass spectra. The optimum conditions for the PPN film formation is 10 mJ cm−2 at 266 nm.

Preparation of Polyperinaphthalene Thin Films by Excimer Laser Ablation and Their Application to Optic and Electronic Devices.

“…In recent years, particularly, preparation of PPN films by laser ablation has been attracted a great deal of attention. [5][6][7] In our previous paper [6,7], we found that excimer laser ablation (ELA) of 3, 4, 9, 10-perylenetetracarboxylic dianhydride (PTCDA) targets enabled us to prepare films consisting of Furthermore, it is demonstrated that mixture targets of PTCDA with metal powders such as Co (PTCDA/Co) led to increase the yield of "naked" perylene skeletons without side groups of PTCDA by improving the efficiency of elimination of the groups by catalytic effect of Co, resulting in more effective preparation of PPN films. [8] In this paper, optimized ablation conditions have been determined for preparation of better defined PPN films by ELA of PTCDA and/or mixture targets of PTCDA with Ti02 as well as Co powders expecting further catalytic effect.…”

Electric Conductivity Measurement of Polyperinaphthalene Thin Films Prepared by Laser Ablation of PTCDA/Co Mixture Target.

“…[2,3] In recent years, particularly, preparation of PPN films by laser ablation has been attracted a great deal of attention. [4][5][6] In our previous paper [6], we found that excimer laser ablation (ELA) of mixture targets of 3, 4, 9, 10-perylenetetracarboxylic dianhydride (PTCDA) with metal powders such as Co (PTCDA/Co) led to increase the yield of "naked" perylene skeletons without side groups by improving the efficiency of elimination of side groups of PTCDA, resulting in more effective preparation of PPN films. (Scheme I) In this paper, electric conductivities were measured for the PPN films prepared on substrates at 20, 300, 400, 500 and 550°C by ELA of PTCDA/Co mixture targets.…”

Preparation of Polyperinaphthalene Films by Laser Ablation of PTCDA/Metal Target.

“…So many research groups have a fierce competition with each other to develop the method to prepare films of this material. [7][8][9] In recent years, particularly, preparation of PPN films by laser ablation has been attracted a great deal of attention. [8,[10][11][12][13] In our previous paper [ 11 ], amorphous organic semiconducting thin films with PPN component named polyperinaphthalenic organic semiconductor (PPNOS) [5] were prepared by excimer laser ablation (ELA) of 3, 4, 9, 10-perylenetetracarboxylic dianhydride (PTCDA), with a 308nm (XeCI) beam on a substrate at 300 °C .…”