Polymeric cantilevered piezotronic strain microsensors processed by Atomic Layer Deposition

Joly, Raoul; Girod, Stéphanie; Adjeroud, Noureddine; Nguyen, Tai; Grysan, Patrick; Klein, Sébastien; Menguelti, K.; Vergne, Christèle; Polesel-Maris, Jérôme

doi:10.1016/j.sna.2020.112280

Cited by 3 publications

(9 citation statements)

References 38 publications

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“…The strain induces the creation of localized piezoelectric polarization charges at the MS interfaces, which, in turn, effectively modulate the height of the Schottky barriers [ 53 ]. This has a direct impact on the electrical behaviour of the sensors by exponentially tuning the electrical current [ 38 ] and thus the flow of electrons passing through the MSM junctions. As the electrons are directly involved in the capacitive response of our devices at the MS interface, the capacitance is thus expected to be modulated with the strain accordingly.…”

Section: Resultsmentioning

confidence: 99%

“…The peculiar ALD features (e.g., low temperature processing, self-limiting nature and stoichiometric control at the nanoscale level) allow for a reliable microfabrication processing on flexible polymeric substrates. More details concerning the microfabrication process flow and the sensors’ electrical and transducing behaviour are available in our previous work [ 38 ].…”

Section: Methodsmentioning

confidence: 99%

“…The upward bending of the polyimide cantilevers is shown in Figure 1 b. The method of strain calculation is detailed in our previous work [ 38 ].…”

Section: Methodsmentioning

confidence: 99%

“…In the present work, we report on the evidence of negative capacitance values in a system consisting of piezotronic strain microsensors, where Pt/ZnO/Pt Schottky junctions are integrated at the clamped area of millimetre-sized polyimide cantilevers [ 38 ]. The Schottky junctions are made of zinc oxide thin films deposited by ALD on top of a polyimide substrate with bottom platinum interdigitated electrodes (IDE).…”

Section: Introductionmentioning

confidence: 99%

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Evidence of Negative Capacitance and Capacitance Modulation by Light and Mechanical Stimuli in Pt/ZnO/Pt Schottky Junctions

Joly

Girod

Adjeroud

et al. 2021

Sensors

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We report on the evidence of negative capacitance values in a system consisting of metal-semiconductor-metal (MSM) structures, with Schottky junctions made of zinc oxide thin films deposited by Atomic Layer Deposition (ALD) on top of platinum interdigitated electrodes (IDE). The MSM structures were studied over a wide frequency range, between 20 Hz and 1 MHz. Light and mechanical strain applied to the device modulate positive or negative capacitance and conductance characteristics by tuning the flow of electrons involved in the conduction mechanisms. A complete study was carried out by measuring the capacitance and conductance characteristics under the influence of both dark and light conditions, over an extended range of applied bias voltage and frequency. An impact-loss process linked to the injection of hot electrons at the interface trap states of the metal-semiconductor junction is proposed to be at the origin of the apparition of the negative capacitance values. These negative values are preceded by a local increase of the capacitance associated with the accumulation of trapped electrons at the interface trap states. Thus, we propose a simple device where the capacitance values can be modulated over a wide frequency range via the action of light and strain, while using cleanroom-compatible materials for fabrication. These results open up new perspectives and applications for the miniaturization of highly sensitive and low power consumption environmental sensors, as well as for broadband impedance matching in radio frequency applications.

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Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

“…The upward bending of the polyimide cantilevers is shown in Figure 1 b. The method of strain calculation is detailed in our previous work [ 38 ].…”

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Evidence of Negative Capacitance and Capacitance Modulation by Light and Mechanical Stimuli in Pt/ZnO/Pt Schottky Junctions

Joly

Girod

Adjeroud

et al. 2021

Sensors

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“…A proper control over the crystallographic structure of ZnO thin films and their properties is needed for various applications, such as optoelectronics, 1 solar-based devices, 2 harvesters, sensors and actuators. [3][4][5][6][7] This control is usually achieved by varying the single crystal substrates [8][9][10][11] and the deposition temperature, [12][13][14][15] however practical applications are limited due to requirements in the crystallographic structure of substrates, as well as elevated deposition temperatures. Park et al, 16 and our previous study 17 demonstrated that the crystallographic structure, the optical and the electronic properties of ZnO thin film were highly tuned by the introduction of gas pulsing of molecular oxygen during atomic layer deposition growth at quite low temperatures (100-200 1C) and even on glass substrates.…”

Section: Introductionmentioning

confidence: 99%

Elucidating the growth mechanism of ZnO films by atomic layer deposition with oxygen gas via isotopic tracking

et al. 2021

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Study of Gallium-Doped Zinc Oxide Thin Films Processed by Atomic Layer Deposition and RF Magnetron Sputtering for Transparent Antenna Applications

et al. 2023

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Gallium-doped zinc oxide (GZO) films were fabricated using RF magnetron sputtering and atomic layer deposition (ALD). The latter ones demonstrate higher electrical conductivities (up to 2700 S cm–1) and enhanced charge mobilities (18 cm2 V–1 s–1). The morphological analysis reveals differences mostly due to the very different nature of the deposition processes. The film deposited via ALD shows an increased transmittance in the visible range and a very small one in the infrared range that leads to a figure of merit of 0.009 Ω–1 (10 times higher than for the films deposited via sputtering). A benchmarking is made with an RF sputtered indium-doped tin oxide (ITO) film used conventionally in the industry. Another comparison between ZnO, Al:ZnO (AZO), and Ga:ZnO (GZO) films fabricated by ALD is presented, and the evolution of physical properties with doping is evidenced. Finally, we processed GZO thin films on a glass substrate into patterned transparent patch antennas to demonstrate an application case of short-range communication by means of the Bluetooth Low Energy (BLE) protocol. The GZO transparent antennas’ performances are compared to a reference ITO antenna on a glass substrate and a conventional copper antenna on FR4 PCB. The results highlight the possibility to use the transparent GZO antenna for reliable short-range communication and the achievability of an antenna entirely processed by ALD.

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Polymeric cantilevered piezotronic strain microsensors processed by Atomic Layer Deposition

Cited by 3 publications

References 38 publications

Evidence of Negative Capacitance and Capacitance Modulation by Light and Mechanical Stimuli in Pt/ZnO/Pt Schottky Junctions

Evidence of Negative Capacitance and Capacitance Modulation by Light and Mechanical Stimuli in Pt/ZnO/Pt Schottky Junctions

Elucidating the growth mechanism of ZnO films by atomic layer deposition with oxygen gas via isotopic tracking

Study of Gallium-Doped Zinc Oxide Thin Films Processed by Atomic Layer Deposition and RF Magnetron Sputtering for Transparent Antenna Applications

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