Polymer Resist Systems for Photo- And Electron Lithography

Thompson, L. F.; Kerwin, R. E.

doi:10.1146/annurev.ms.06.080176.001411

Cited by 79 publications

(27 citation statements)

References 1 publication

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“…Здебільшого в якості електронних резистів використовуються полімери -ПММА, полістирол та інші [2]. Однак, дослідження впливу електронного опромінення на халькогенідні плівки показали на наявність модифікації їх поверхні електронним променем [3][4][5] Зростання дози опромінення понад 9.310 4 мкКл/см 2 (t>5 мс) приводить до інверсії форми електронно індукованого рельєфу.…”

Section: вступunclassified

Fabrication of information protection elements on the film As4Se96 by electron-beam lithography method

Біланич¹,

Шиленко²,

Команіцкій³

et al. 2017

Sci.Herald.Uzh.Univ.Ser.Phys

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Section: вступunclassified

Fabrication of information protection elements on the film As4Se96 by electron-beam lithography method

Біланич¹,

Шиленко²,

Команіцкій³

et al. 2017

Sci.Herald.Uzh.Univ.Ser.Phys

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“…We further assume that the coefficient a0 in equation (3) is unaltered by the inclusion of standing waves in the inhibitor concentration profile given by equation (6).…”

Section: Analytical Relation For the Inhibitor Concentrationmentioning

confidence: 99%

“…Finally, when standing waves are present, the inhibitor concentration is given, as before, by a superposition, by M(z,D) = exp(-a0D)M1(z,D) + [1-exp(-a0D)]M2(z,D) (7) but now with M1 and M2 given by equation (6).…”

Section: Analytical Relation For the Inhibitor Concentrationmentioning

confidence: 99%

Modeling The Dependence Of Photoresist Contrast And Linewidth On Processing Variables

Srinivasan

Babu

1986

Advances in Resist Technology and Processing III

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The analysis proposed earlier by us1,2 for the evaluation of the contrast of diazo -type positive photoresists is extended to include the influence of standing waves and postexposure bake.The dependence of the contrast on a large number of processing variables including exposure dose, development time, developer concentration, pre-and post-exposure thermal treatment, etc. is evaluated. For a substrate that is optically matched with the photoresist, however, the evaluation of contrast is exact and more direct using the recently derived3 closed form solution of Dill's equations.Further, assuming that the resist development occurs in two stages, first down to the substrate and then away from the center line, the variation of linewidth with the development time has been calculated for AZ1370 resist for a given aerial image intensity distribution across the resist surface. If the resist development occurs predominantly in the downward direction, then it is shown that the slope of the line channel sidewall is proportional to the contrast.

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“…For any other exposure dose D at the surface of the resist, the energy received at any location z will be D(z) = D exp( -D'z) (2) We are assuming that D' remains constant. If D(z) equals Dp, then all the material from 0 to z in the resist will be solubilized by our ideal developer.…”

Section: Introductionmentioning

confidence: 99%

Optical Density And Contrast Of Positive Photoresists

Babu

Srinivasan

1985

SPIE Proceedings

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We derive a general relation that exhibits the interdependence of the exposure and development processes in determining the contrast and the sensitivity curve of any photoresist. We show,that for several limiting cases, the contrast is given by the reciprocal of the (pre-or post-expose) optical density of the resist, in agreement with the measured contrasts for PR102, AZ2400 and Dupont 2041 Elvacite PMMA resists.We also calculate the dependence of the threshold exposure energy Dp, and the dose D°p required to completely develop the resist, and hence, the contrast, on development time for a hypothetical solvent and simulate the results obtained using MF314 developer.

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Polymer Resist Systems for Photo- And Electron Lithography

Cited by 79 publications

References 1 publication

Fabrication of information protection elements on the film As<sub>4</sub>Se<sub>96</sub> by electron-beam lithography method

Fabrication of information protection elements on the film As<sub>4</sub>Se<sub>96</sub> by electron-beam lithography method

Modeling The Dependence Of Photoresist Contrast And Linewidth On Processing Variables

Optical Density And Contrast Of Positive Photoresists

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