Conjugated polymers with narrow band gaps are particularly
useful
for sorting and discriminating semiconducting single-walled carbon
nanotubes (s-SWCNT) due to the low charge carrier injection barrier
for transport. In this paper, we report two newly synthesized narrow-band-gap
conjugated polymers (PNDITEG-TVT and PNDIC8TEG-TVT) based on naphthalene diimide (NDI) and thienylennevinylene (TVT)
building blocks, decorated with different polar side chains that can
be used for dispersing and discriminating s-SWCNT. Compared with the
mid-band-gap conjugated polymer PNDITEG-AH, which is
composed of naphthalene diimide (NDI) and head-to-head bithiophene
building blocks, the addition of a vinylene linker eliminates the
steric congestion present in head-to-head bithiophene, which promotes
backbone planarity, extending the π-conjugation length and narrowing
the band gap. Cyclic voltammetry (CV) and density functional theory
(DFT) calculations suggest that inserting a vinylene group in a head-to-head
bithiophene efficiently lifts the highest occupied molecular orbital
(HOMO) level (−5.60 eV for PNDITEG-AH, −5.02
eV for PNDITEG-TVT, and −5.09 eV for PNDIC8TEG-TVT). All three polymers are able to select for s-SWCNT, as evidenced
by the sharp transitions in the absorption spectra. Field-effect transistors
(FETs) fabricated with the polymer:SWCNT inks display p-dominant properties,
with higher hole mobilities when using the NDI-TVT polymers as compared
with PNDITEG-AH (0.6 cm2 V–1 s–1 for HiPCO:PNDITEG-AH, 1.5 cm2 V–1 s–1 for HiPCO:PNDITEG-TVT, and 2.3 cm2 V–1 s–1 for HiPCO:PNDIC8TEG-TVT). This improvement
is due to the better alignment of the HOMO level of PNDITEG-TVT and PNDIC8TEG-TVT with that of the dominant SWCNT specie.