1 A flexible 4.7-inch QVGA active-matrix electrophoretic display is demonstrated, containing 76800 solution-processed organic transistors. In the same technology, 32-and 120-stage row drivers are produced with adequate speed to drive a QVGA display. Both the display and the drivers are highly flexible. Bending the display to a radius below 2cm does not result in any performance loss. 1. Objectives and background Flexible displays have been demonstrated based on liquid crystal [1], polymer light-emitting diodes [2] and electrophoretic ink [3]. The use of TFTs based on solution-processed organic materials in flexible active-matrix displays [4] has a number of advantages over conventional techniques using mainly inorganic materials. It simplifies the display manufacturing process compared to the conventional chemical vapor deposition techniques. The processing temperature is as low as 170°C [5], creating the possibility to use a wide range of plastic substrates instead of glass. Furthermore, the mechanical properties of organic materials are compatible with plastic substrates.Standard technologies, such as chip bonding or chip-on-glass, currently common in flat displays to make the connections with the driver electronics, cannot be used easily in flexible rollable displays. The reason is that all connections of a rollable display must be routed to one side, resulting in a large footprint. Moreover, the connection to the drivers will become unreliable due to the small pitch of the connections and the difference in expansion coefficient between the drivers and the display foil. Therefore integration of shift registers on a rollable display is very beneficial.Here we demonstrate the use of organic solution-processed insulator and semiconductor materials in a flexible QVGA display as well as in shift registers. These devices are produced using the same technology and will be integrated in the near future.
TechnologyThe bottom-gate thin-film transistor (TFT) layout is shown in Figure 1. The devices are processed on 6-inch, 25µm thin plastic substrates. Processing starts with the gate layer that is obtained by deposition of gold (25nm) followed by structuring. Next, a 350nm thick photo-imageable polymer insulator layer is applied from solution. A second patterned gold layer formes the source-drain layer. On top of this stack, the organic p-type semiconductor pentacene is applied by spin-coating. This results in a pentacene film with a thickness of 50nm, which can then be structured photo-lithographically.