Polymer-Based Gate Dielectrics for Organic Field-Effect Transistors

Wang, Yuxin; Huang, Xingyi; Li, Tao; Li, Liqiang; Guo, Xiaojun; Jiang, Pingkai

doi:10.1021/acs.chemmater.8b03904

Cited by 142 publications

(141 citation statements)

References 236 publications

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“…In the case that a single dielectric layer has inferior dielectric properties, using hybrid or multilayer dielectrics has been applied to improve the performance of OFETs as well as sensors and memory . Recently, it demonstrated that using the PMMA/polyacrylic acid (PAA) dielectric revealed extremely suppressed hysteresis and improved mobility compared to those with a pure PAA dielectric ( Figure a) .…”

Section: Optimization Of Nonideal Ofetsmentioning

confidence: 99%

Understanding, Optimizing, and Utilizing Nonideal Transistors Based on Organic or Organic Hybrid Semiconductors

Yang

Dai

et al. 2019

Adv Funct Materials

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Many advanced materials have been developed for organic field-effect transistors (OFETs) or thin-film transistors (TFTs) based on organic and organic hybrid materials. However, although many new OFETs exhibit superior characteristic parameters (such as high mobility), most of them show nonideal performances that have strongly limited progress in the design of molecules, the understanding of transport mechanisms, and the circuit applications of OFETs. In this review, the device physics of ideal and nonideal OFETs is discussed first to understand the factors that limit effective mobility in semiconducting channels, distort the potential distribution, or reduce the drift electric field. Then, recent advances in optimizing the material combinations, device structures, and fabrications of OFETs toward ideal transistors are discussed. Based on the good control of materials and interfaces, some new and novel concepts to utilize the nonideal properties of OFETs to build low-power circuits and integrated sensors are also discussed.

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Section: Optimization Of Nonideal Ofetsmentioning

confidence: 99%

Understanding, Optimizing, and Utilizing Nonideal Transistors Based on Organic or Organic Hybrid Semiconductors

Yang

Dai

et al. 2019

Adv Funct Materials

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“…Room temperature anodization of ultra‐thin (<10 nm) oxide gate dielectrics,9 or vapor phase deposition of self‐assembled nanodielectrics10 overcome these drawbacks, but such methods require complex fabrication steps that may be challenging for scale‐up 11. In contrast, polymer‐based dielectric insulators can be processed from solution over large areas on top of OSC layers 12. Conventional polymer insulators give films with low k values (2–5) and C i unsuited for low voltage operation at conventional film thicknesses (>100 nm).…”

mentioning

confidence: 99%

Robust High‐Capacitance Polymer Gate Dielectrics for Stable Low‐Voltage Organic Field‐Effect Transistor Sensors

Rahmanudin

Tate

Marcial-Hernández

et al. 2020

Adv Elect Materials

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Organic field‐effect transistors (OFETs) have shown great promise for use as chemical sensors for applications that range from the monitoring of food spoilage to the determination of air quality and the diagnosis of disease. However, for these devices to be truly useful, they must deliver reliable and stable low‐voltage operation over extended timescales. An important element to address this challenge is the development of a high‐capacitance gate dielectric that delivers excellent insulation with robust chemical resistance against the solution processing of organic semiconductors (OSC). The development of a bilayer gate dielectric containing a high‐k fluoropolymer relaxor ferroelectric layer modified at the OSC/dielectric interface with a photo‐crosslinked chemically resistant low‐k methacrylate‐based copolymer buffer layer is reported. Bottom‐gate OFET chemical sensors using this bilayer dielectric operate at low‐voltage with exceptional operational stability. They deliver reliable sensing performance over multiple cycles of ammonia exposure (2 to 50 ppm) with an estimated limit‐of‐detection below 1 ppm.

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“…Consequently, the thermal evaporated OFETs turned on at the gate voltage of −1 V gate bias ( figure 1(b)). Apart from oxide dielectrics, applying high-κ polymers is also an efficient way to reduce the operating voltage of OFETs [31,58]. Poly(vinyl alcohol) (PVA) with dielectric permittivity of approximately 7 appeared as a candidate in OFET fabrication.…”

Section: Methodsmentioning

confidence: 99%

Low-power-consumption organic field-effect transistors

et al. 2020

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At present, the electrical performance of organic field-effect transistors (OFETs) has reached the level of commercial amorphous silicon. OFETs show considerable application potential in artificial intelligence, deep learning algorithms, and artificial skin sensors. The devices which can operate with high performance and low power consumption are needed for these applications. The recent energyrelated improvement to realize low-power consumption OFETs were reviewed, including minimizing operating voltage, reducing subthreshold swing, and decreasing contact resistance. In this review, we demonstrate breakthroughs in materials and methods to decrease power consumption, providing a promising avenue toward low-power consumption organic electronics. IntroductionFollowing the seminal paper from Tsumura, in which he demonstrated the first polythiophene-based field-effect transistor in 1986, organic field-effect transistors (OFETs) have received tremendous developments due to the intriguing properties of organic semiconductors, such as flexibility, stretchability, biocompatibility, solution processibility, and low cost [1][2][3][4]. To date, the field-effect mobility, which is the main character of an OFET device, has increased over 40 cm 2 V −1 s −1 . With the improvements in electric performance, the large-scale integration of OFETs have facilitated impressive application demonstrations, including organic light-emitting diode displays, radiofrequency identification tagging, and artificial skin [5][6][7][8][9][10][11][12]. To meet the future demand for product miniaturization and high properties, the number and density of transistors need to be increased, thus the heat energy caused by the power dissipation will lead to the degradation of organic materials and the life reduction of devices [13][14][15][16][17][18][19]. In addition, high power consumption limits the applications of most portable electronics which need an external battery [20][21][22][23]. All of these demands in applications require transistors to operate with extremely low-power consumption. However, power dissipation of most OFETs suffers from a high operating voltage typically a few tens of volts, which has a quadratic effect on dynamic power consumption [3,[24][25][26][27][28][29]. Furthermore, transistors sizes are also now approaching the point where quantum effects become appreciable, which can lead to an increased gate leakage current due to quantum tunneling and, in turn, an increased static power consumption.Achieving extremely energy-efficient OFETs is an essential prerequisite for commercial applications. After years of expansive development, significant advancements have been made in fabricating high quality dielectrics, thus reducing the operating voltage and leakage current. Furthermore, the subthreshold slope, which is negative correlation with switching efficiency, has witnessed a significant decrease driven by the process optimization and interface engineering [6,[30][31][32]. Additionally, the contact between semiconductors and electro...

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Polymer-Based Gate Dielectrics for Organic Field-Effect Transistors

Cited by 142 publications

References 236 publications

Understanding, Optimizing, and Utilizing Nonideal Transistors Based on Organic or Organic Hybrid Semiconductors

Understanding, Optimizing, and Utilizing Nonideal Transistors Based on Organic or Organic Hybrid Semiconductors

Robust High‐Capacitance Polymer Gate Dielectrics for Stable Low‐Voltage Organic Field‐Effect Transistor Sensors

Low-power-consumption organic field-effect transistors

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