Polyhedral oligomeric silsequioxane monolayer as a nanoporous interlayer for preparation of low-kdielectric films

Abstract

Polyhedral oligomeric silsequioxane (POSS) monomer was fixed to a silicon surface by reacting octakis(glycidyldimethylsiloxy)octasilsesquioxane (OG-POSS) with the OH-terminated silicon surface in the presence of tin (II) chloride. The POSS cage layer then served as a nanoporous interlayer to reduce the dielectric constants of polyimide films on silicon surfaces. The chemical structure and surface morphology of OG-POSS modified silicon surfaces were characterized with XPS. With the introduction of a POSS nanopored interlayer, the dielectric constants of polyimide films were reduced.

Morphological behavior of thin polyhedral oligomeric silsesquioxane films at the molecular scale

“…However, the preparation of thin POSS-based films presents some technical difficulties related to wetting and adhesive properties of a given material, which are influenced by both surface chemistry and topography. This problem can be aggravated when POSS ultrathin coatings play a role of precursors or interlayers for creating of thin nanocomposite films [13,14], and if Langmuir-Blodgett, spin-or dip-coating techniques are used for film deposition. In situations when we are dealing with thin films under 1000 Å thick, intermolecular forces become operative that may lead to a dramatic influence on the film properties.…”

Ultra-Low-<I>k</I> Thin Films of Polyhedral Oligomeric Silsesquioxane/Epoxy Nanocomposites via Covalent Layer-by-Layer Assembly

“…The preparation and characterization of Si-1-POSS is reported in the previous work. 28 Reaction of Si-1-POSS with HID changes the epoxide-terminated silicon to be amine-terminated (Si-2-HID). The amine group on the Si-2-HID surface is reactive toward epoxide groups.…”

Surface grafting of polyimide onto silicon surface: Preparation and characterization

“…First, silicon surface modification was performed through the reaction between HO-terminated silicon and the oxirane group of GPE in the presence of SnCl 2 Á2H 2 O using as a reaction promoter. [30][31][32] This modification approach does not need pretreatment on silicon and reduction of the oxidized silicon (HO-silicon) surface to hydrogen-terminated silicon. As shown in Figure 1, GPE was incorporated onto silicon surface.…”

“…[30][31][32] After reaction at 110 8C for 12 h, silicon was drawn out, washed with acetone and distilled water, and dried under vacuum to give GPE-modified silicon Si-GPE.…”

“…[22][23][24][25] Polyimides have shown outstanding thermal and electrical properties and wide applications in microelectronic, energy, and aerospace industry. [26][27][28][29][30] Polyimide-surface-functionalized mesoporous silica 24 and silica tubes 25 were obtained for the preparation of polyimide-silica nanocomposites. Based on the attractive properties of polyimides and their wide applications in microelectronics, introduction of tethered-polyimide chains on silicon surfaces is of interest in this work.…”