Polydiallylorthophthalate resist for electron‐beam lithography

Abstract

Polydiallylorthophthalate, PDOP, of low molecular weight and low molecular weight dispersivity has been prepared and investigated as a negative resist for electron‐beam, X‐ray and ultraviolet lithographies. The resist polymers were prepared by a conventional fractional precipitation method. It has been found that a high resolution pattern is obtained by using a molecular weight of 1 × 104 and an Mw/Mn < 2. This gives a good solubility difference between the exposed and unexposed portions in the developer. Resolution is less than 1 μm without any scum. Sensitivity for 15 kV electron bourns is 4 × 106C/cm2; and for X‐rays (Al Kα) it is 100 mJ/cm2. Sensitivity for UV is 10 times that of poly(methyl methacrylate), and resistance for C3F8 dry etching is comparable to AZ‐1350J.