Abstract:We report on the successful fabrication of polycrystalline silicon films by aluminium-induced crystallisation (AIC) of Radio frequency (rf) plasmaenhanced chemical vapour deposited (PECVD) a-Si films. The effects of annealing at different temperatures (300 and 400 C), below the eutectic temperature of the Si-Al binary system, on the crystallisation process have been studied. This work emphasises the important role of the position of the Al layer with respect to the Si layer on the crystallisation process. The … Show more
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